A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

Chun Yuan Chen; Wei Chou Wang; Wen Hui Chiou; Chih Kai Wang; Hung Ming Chuang; Shiou Ying Cheng; Wen Chau Liu

doi:10.1016/S0038-1101(02)00090-4

A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

Chun Yuan Chen, Wei Chou Wang, Wen Hui Chiou, Chih Kai Wang, Hung Ming Chuang, Shiou Ying Cheng, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity δE_V at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.

Original language	English
Article number	3086
Pages (from-to)	1289-1294
Number of pages	6
Journal	Solid-State Electronics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(02)00090-4
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00090-4

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@article{5cfe711f6f1a41c3ac1e6bfa55f5d081,

title = "A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)",

abstract = "The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity δEV at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.",

author = "Chen, {Chun Yuan} and Wang, {Wei Chou} and Chiou, {Wen Hui} and Wang, {Chih Kai} and Chuang, {Hung Ming} and Cheng, {Shiou Ying} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC.90-2215-E-006-015.",

year = "2002",

doi = "10.1016/S0038-1101(02)00090-4",

language = "English",

volume = "46",

pages = "1289--1294",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

AU - Chen, Chun Yuan

AU - Wang, Wei Chou

AU - Chiou, Wen Hui

AU - Wang, Chih Kai

AU - Chuang, Hung Ming

AU - Cheng, Shiou Ying

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC.90-2215-E-006-015.

PY - 2002

Y1 - 2002

N2 - The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity δEV at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.

AB - The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity δEV at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.

UR - http://www.scopus.com/inward/record.url?scp=0036721825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036721825&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00090-4

DO - 10.1016/S0038-1101(02)00090-4

M3 - Article

AN - SCOPUS:0036721825

SN - 0038-1101

VL - 46

SP - 1289

EP - 1294

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

M1 - 3086

ER -

A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

Abstract

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