A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, C. K. Chiang, S. J. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

In this work, we investigate the influence of incorporation Zirconia (ZrO 2) in gate dielectric HfO 2 on electrical properties and the reliability of nMOSFET for the 28nm technology node. Detailed film physical, chemical and optical properties of Hf 1-xZr xO 2 as a function of Zr content were studied using HRTEM, AR-XPS, spectroscopic ellipsometer. Compared to HfO 2, Hf 1-xZr xO 2 provides lower C-V hysteresis, V t shift (ΔV t) and higher Time to Failure (TTF) lifetimes are achieved with Zr incorporation in an ALD Hf 1-xZr xO 2/SiO2 gate stack. The improved reliability of the Hf 1-xZr xO 2 gate dielectric is attributed to the reduced charge trapping in the Hf 1-xZr xO 2 gate dielectric caused by the Zr incorporation.

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
PagesGD.3.1-GD.3.4
DOIs
Publication statusPublished - 2012 Sep 28
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: 2012 Apr 152012 Apr 19

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period12-04-1512-04-19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chiang, C. K., Chang, J. C., Liu, W. H., Liu, C. C., Lin, J. F., Yang, C. L., Wu, J. Y., Chiang, C. K., & Wang, S. J. (2012). A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. GD.3.1-GD.3.4). [6241910] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241910