A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, C. K. Chiang, S. J. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

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Engineering & Materials Science