A complete Raman mapping of phase transitions in Si under indentation

C. R. Das, H. C. Hsu, S. Dhara, A. K. Bhaduri, B. Raj, L. C. Chen, K. H. Chen, S. K. Albert, A. Ray, Y. Tzeng

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Crystalline Si substrates are studied for pressure-induced phase transformation under indentation at room temperature (RT) using a Berkovich tip. Raman spectroscopy, as a nondestructive tool, is used for the identification of the transformed phases. Raman lines as well as areamapping areused for locating the phases in the indentedregion. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of the amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates.

Original languageEnglish
Pages (from-to)334-339
Number of pages6
JournalJournal of Raman Spectroscopy
Volume41
Issue number3
DOIs
Publication statusPublished - 2010 Mar

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Spectroscopy

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