A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Y. T. Tang, C. L. Fan, Y. C. Kao, N. Modolo, C. J. Su, T. L. Wu, K. H. Kao, P. J. Wu, S. W. Hsaio, A. Useinov, Pin Su, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper clarifies for the first time the origin of ferroelectricity in the Negative Capacitance Field-Effect Transistors (NCFETs) by molecular dynamics (MD) simulation. MD simulation considering atomic interactions between all atoms enables accurate predictions for the microstructure even at all interfaces. By incorporating the results from MD simulations into a kinetic model, it is able to predict the conditions of crystallization and phase transition during RTP and cooling processes that govern ferroelectricity in FETs. Our simulation reveals that the comparable interfacial energy between o-and t-phase, and in-plane tensile stress from metal capping or interfacial layers (ILs) enable more phase transition from t-to o-phase, and more ferroelectricity in NCFETs. Finally, design methodology to maintain the electric variation of NCFETs is also proposed.

Original languageEnglish
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT222-T223
ISBN (Electronic)9784863487178
DOIs
Publication statusPublished - 2019 Jun
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: 2019 Jun 92019 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
CountryJapan
CityKyoto
Period19-06-0919-06-14

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Tang, Y. T., Fan, C. L., Kao, Y. C., Modolo, N., Su, C. J., Wu, T. L., ... Wang, Y. H. (2019). A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs. In 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers (pp. T222-T223). [8776508] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2019.8776508