A comprehensive parameterized model of phase-change memory cell for HSPICE circuit simulation

Der Sheng Chao, Chenhsin Lien, Yan Kai Chen, Yi Bo Liao, Meng Hsueh Chiang, Ming Jer Kao, Ming Jinn Tsai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A comprehensive phase-change memory (PCM) HSPICE model with a simplified and flexible parameterized function was proposed and developed in this work. To extract the specific device parameters relevant to the cell characteristics for the establishment of PCM HSPICE model, a novel PCM cell with double-confinement structure was fabricated and electrically characterized. Several interrelated functional circuits were used to totally describe the characteristics of PCM cell and incorporated into a two-terminal HSPICE model. Based on this flexible model with designated device parameters, the programming characteristics of the double-confined cell including the determined static and dynamic programming states and the pulse-dependent and current-induced phase-transition behaviors can be accurately emulated. The simulation results show a good agreement with the experimental current-voltage (I-V) and resistance-current (R-I) curves, implying the feasibility and accuracy of the PCM HSPICE model. Therefore, the PCM HSPICE model developed in this work is applicable to future PCM chip designs.

Original languageEnglish
Pages (from-to)2696-2700
Number of pages5
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2008 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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