A comprehensive phase-change memory (PCM) HSPICE model with a simplified and flexible parameterized function was proposed and developed in this work. To extract the specific device parameters relevant to the cell characteristics for the establishment of PCM HSPICE model, a novel PCM cell with double-confinement structure was fabricated and electrically characterized. Several interrelated functional circuits were used to totally describe the characteristics of PCM cell and incorporated into a two-terminal HSPICE model. Based on this flexible model with designated device parameters, the programming characteristics of the double-confined cell including the determined static and dynamic programming states and the pulse-dependent and current-induced phase-transition behaviors can be accurately emulated. The simulation results show a good agreement with the experimental current-voltage (I-V) and resistance-current (R-I) curves, implying the feasibility and accuracy of the PCM HSPICE model. Therefore, the PCM HSPICE model developed in this work is applicable to future PCM chip designs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)