A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array

Yu Hsuan Lin, Yung Han Ho, Ming Hsiu Lee, Chao Hung Wang, Yu Yu Lin, Feng Ming Lee, Kai Chieh Hsu, Po Hao Tseng, Dai Ying Lee, Kuang Hao Chiang, Keh Chung Wang, Tseung Yuen Tseng, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

For the first time the retention of high resistance state (HRS) in resistive random access memory (ReRAM) is found to compose of three stages - extending tail-bits, distribution shift, and then distribution broadening. This work provides a comprehensive study on the HRS's retention behavior in WOx-based ReRAMs from single device characteristics to group distribution. Different from conventional activation energy (Ea) analysis, the mean and variance of the array distribution are presented to overcome the non-uniform Ea issue. Since the extracted Ea fits well with Vo2+ (oxygen vacancy) migration characteristics, the three retention stages are suggested to be the competing results from the migration, recombination, and generation of the Vo2+ and O2- in the gap region. A three-dimensional retention model with kinetic Monte Carlo simulator and trap-assisted tunneling conduction is proposed to discuss the dominating mechanism in different time and temperature scales. The mechanism for random telegraph noise is also included to illustrate the fluctuating nature of the HRS cells.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2.5.1-2.5.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 2018 Jan 23
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2017 Dec 22017 Dec 6

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco
Period17-12-0217-12-06

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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