A comprehensive study of polysilicon resistors for CMOS ULSI applications

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Chun Tsen Lu, Xin Da Liao, Kuan Ming Lee, Hon Rung Chen, Wen Chau Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The characteristics of polysilicon resistors for CMOS ULSI applications have been investigated. Based on the presented sub-quarter micron CMOS borderless contact, both n+ and p+ polysilicon resistors with Ti- and Co-silicide self-aligned process are used at the neds of each resistor. A simple and useful model is proposed to analyse and calculate some important parameters of polysilicon resistors including electrical delta W(ΔW), interface resistance Rinterface, and pure sheet resistance Rpure. Furthermore, the characteristics of voltage-coefficient resistor, temperature-coefficient resistor, and resistor mismatching are also studied. An interesting sine-wave voltage-dependent characteristic due to the strong relation to the Rinterface has been modelled in this paper. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-quarter micron CMOS ULSI technology.

Original languageEnglish
Pages (from-to)193-208
Number of pages16
JournalSuperlattices and Microstructures
Volume33
Issue number4
DOIs
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Chuang, H. M., Thei, K. B., Tsai, S. F., Lu, C. T., Liao, X. D., Lee, K. M., Chen, H. R., & Liu, W. C. (2003). A comprehensive study of polysilicon resistors for CMOS ULSI applications. Superlattices and Microstructures, 33(4), 193-208. https://doi.org/10.1016/S0749-6036(03)00068-5