The characteristics of polysilicon resistors for CMOS ULSI applications have been investigated. Based on the presented sub-quarter micron CMOS borderless contact, both n+ and p+ polysilicon resistors with Ti- and Co-silicide self-aligned process are used at the neds of each resistor. A simple and useful model is proposed to analyse and calculate some important parameters of polysilicon resistors including electrical delta W(ΔW), interface resistance Rinterface, and pure sheet resistance Rpure. Furthermore, the characteristics of voltage-coefficient resistor, temperature-coefficient resistor, and resistor mismatching are also studied. An interesting sine-wave voltage-dependent characteristic due to the strong relation to the Rinterface has been modelled in this paper. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-quarter micron CMOS ULSI technology.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering