A confinement-collector gaas switching device prepared by molecular beam epitaxy

Wen Chau Liu, Der Feng Guo, Yeong Shyang Lee

Research output: Contribution to journalArticle

Abstract

A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S- shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p+ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for switching circuit applications.

Original languageEnglish
Pages (from-to)1937-1939
Number of pages3
JournalJapanese Journal of Applied Physics
Volume30
Issue number9
DOIs
Publication statusPublished - 1991 Sep

Fingerprint

Switching circuits
switching circuits
Impact ionization
Molecular beam epitaxy
Voltage control
accumulators
aluminum gallium arsenides
Screening
molecular beam epitaxy
screening
ionization
electric potential
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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A confinement-collector gaas switching device prepared by molecular beam epitaxy. / Liu, Wen Chau; Guo, Der Feng; Lee, Yeong Shyang.

In: Japanese Journal of Applied Physics, Vol. 30, No. 9, 09.1991, p. 1937-1939.

Research output: Contribution to journalArticle

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