A confinement-collector gaas switching device prepared by molecular beam epitaxy

Wen Chau Liu; Der Feng Guo; Yeong Shyang Lee

doi:10.1143/JJAP.30.1937

A confinement-collector gaas switching device prepared by molecular beam epitaxy

Wen Chau Liu, Der Feng Guo, Yeong Shyang Lee

Research output: Contribution to journal › Article › peer-review

Abstract

A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S- shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p⁺ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, V_s/V_H, of the studied structure introduces a good potential for switching circuit applications.

Original language	English
Pages (from-to)	1937-1939
Number of pages	3
Journal	Japanese journal of applied physics
Volume	30
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.30.1937
Publication status	Published - 1991 Sept

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/JJAP.30.1937

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abstract = "A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S- shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p+ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for switching circuit applications.",

author = "Liu, {Wen Chau} and Guo, {Der Feng} and Lee, {Yeong Shyang}",

year = "1991",

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AU - Guo, Der Feng

AU - Lee, Yeong Shyang

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N2 - A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S- shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p+ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for switching circuit applications.

AB - A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S- shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p+ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for switching circuit applications.

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JO - Japanese journal of applied physics

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A confinement-collector gaas switching device prepared by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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