A Cu-based alloyed Ohmic contact system on n -type GaAs

Ke Shian Chen, Edward Yi Chang, Chia Ching Lin, Cheng Shih Lee, Wei Ching Huang, Ching Ting Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

Original languageEnglish
Article number233511
JournalApplied Physics Letters
Volume91
Issue number23
DOIs
Publication statusPublished - 2007 Dec 14

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electric contacts
annealing
contact resistance
secondary ion mass spectrometry
x ray diffraction
spectrometers
electron energy
transmission electron microscopy
microstructure
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, K. S., Chang, E. Y., Lin, C. C., Lee, C. S., Huang, W. C., & Lee, C. T. (2007). A Cu-based alloyed Ohmic contact system on n -type GaAs. Applied Physics Letters, 91(23), [233511]. https://doi.org/10.1063/1.2819687
Chen, Ke Shian ; Chang, Edward Yi ; Lin, Chia Ching ; Lee, Cheng Shih ; Huang, Wei Ching ; Lee, Ching Ting. / A Cu-based alloyed Ohmic contact system on n -type GaAs. In: Applied Physics Letters. 2007 ; Vol. 91, No. 23.
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abstract = "An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.",
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Chen, KS, Chang, EY, Lin, CC, Lee, CS, Huang, WC & Lee, CT 2007, 'A Cu-based alloyed Ohmic contact system on n -type GaAs', Applied Physics Letters, vol. 91, no. 23, 233511. https://doi.org/10.1063/1.2819687

A Cu-based alloyed Ohmic contact system on n -type GaAs. / Chen, Ke Shian; Chang, Edward Yi; Lin, Chia Ching; Lee, Cheng Shih; Huang, Wei Ching; Lee, Ching Ting.

In: Applied Physics Letters, Vol. 91, No. 23, 233511, 14.12.2007.

Research output: Contribution to journalArticle

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T1 - A Cu-based alloyed Ohmic contact system on n -type GaAs

AU - Chen, Ke Shian

AU - Chang, Edward Yi

AU - Lin, Chia Ching

AU - Lee, Cheng Shih

AU - Huang, Wei Ching

AU - Lee, Ching Ting

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AB - An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

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