Abstract
An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.
| Original language | English |
|---|---|
| Article number | 233511 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2007 Dec 14 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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A Cu-based alloyed Ohmic contact system on n -type GaAs. / Chen, Ke Shian; Chang, Edward Yi; Lin, Chia Ching; Lee, Cheng Shih; Huang, Wei Ching; Lee, Ching Ting.
In: Applied Physics Letters, Vol. 91, No. 23, 233511, 14.12.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - A Cu-based alloyed Ohmic contact system on n -type GaAs
AU - Chen, Ke Shian
AU - Chang, Edward Yi
AU - Lin, Chia Ching
AU - Lee, Cheng Shih
AU - Huang, Wei Ching
AU - Lee, Ching Ting
PY - 2007/12/14
Y1 - 2007/12/14
N2 - An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.
AB - An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.
UR - http://www.scopus.com/inward/record.url?scp=36849060146&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36849060146&partnerID=8YFLogxK
U2 - 10.1063/1.2819687
DO - 10.1063/1.2819687
M3 - Article
AN - SCOPUS:36849060146
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
M1 - 233511
ER -