Abstract
An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.
Original language | English |
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Article number | 233511 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)