A Cu-based alloyed Ohmic contact system on n -type GaAs

Ke Shian Chen; Edward Yi Chang; Chia Ching Lin; Cheng Shih Lee; Wei Ching Huang; Ching Ting Lee

doi:10.1063/1.2819687

A Cu-based alloyed Ohmic contact system on n -type GaAs

Ke Shian Chen, Edward Yi Chang, Chia Ching Lin, Cheng Shih Lee, Wei Ching Huang, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

Original language	English
Article number	233511
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2819687
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2819687

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@article{5470ac93e256418d9762570dd5c9b53d,

title = "A Cu-based alloyed Ohmic contact system on n -type GaAs",

abstract = "An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.",

author = "Chen, {Ke Shian} and Chang, {Edward Yi} and Lin, {Chia Ching} and Lee, {Cheng Shih} and Huang, {Wei Ching} and Lee, {Ching Ting}",

note = "Funding Information: The work was supported by the National Science Council of Taiwan, R.O.C. under Contract No. 95-2752-E009-001-PAE and also supported by the Ministry of Economic Affairs, R.O.C. under Contract No. 94-EC-17-A-05-S1-020. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2819687",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - A Cu-based alloyed Ohmic contact system on n -type GaAs

AU - Chen, Ke Shian

AU - Chang, Edward Yi

AU - Lin, Chia Ching

AU - Lee, Cheng Shih

AU - Huang, Wei Ching

AU - Lee, Ching Ting

N1 - Funding Information: The work was supported by the National Science Council of Taiwan, R.O.C. under Contract No. 95-2752-E009-001-PAE and also supported by the Ministry of Economic Affairs, R.O.C. under Contract No. 94-EC-17-A-05-S1-020. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

AB - An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

UR - http://www.scopus.com/inward/record.url?scp=36849060146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36849060146&partnerID=8YFLogxK

U2 - 10.1063/1.2819687

DO - 10.1063/1.2819687

M3 - Article

AN - SCOPUS:36849060146

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233511

ER -