A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Shyh Chyi Wong; Shyh Yuan Hsu; Yeong Her Wang; Mau Phon Houng; Shih Keng Cho

doi:10.1109/16.701476

A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Shyh Chyi Wong, Shyh Yuan Hsu, Yeong Her Wang, Mau Phon Houng, Shih Keng Cho

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.

Original language	English
Pages (from-to)	1459-1467
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	7
DOIs	https://doi.org/10.1109/16.701476
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.701476

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@article{0ef60d813bd9436faa38c406e95fd6f1,

title = "A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion",

abstract = "Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.",

author = "Wong, {Shyh Chyi} and Hsu, {Shyh Yuan} and Wang, {Yeong Her} and Houng, {Mau Phon} and Cho, {Shih Keng}",

note = "Funding Information: Manuscript received February 25, 1997; revised November 10, 1997. The review of this paper was arranged by Editor K. Shenai. This work was supported by the National Science Council of R.O.C. under Contract NSC85-2215-E-006-010.",

year = "1998",

doi = "10.1109/16.701476",

language = "English",

volume = "45",

pages = "1459--1467",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

AU - Wong, Shyh Chyi

AU - Hsu, Shyh Yuan

AU - Wang, Yeong Her

AU - Houng, Mau Phon

AU - Cho, Shih Keng

N1 - Funding Information: Manuscript received February 25, 1997; revised November 10, 1997. The review of this paper was arranged by Editor K. Shenai. This work was supported by the National Science Council of R.O.C. under Contract NSC85-2215-E-006-010.

PY - 1998

Y1 - 1998

N2 - Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.

AB - Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.

UR - http://www.scopus.com/inward/record.url?scp=0032123765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032123765&partnerID=8YFLogxK

U2 - 10.1109/16.701476

DO - 10.1109/16.701476

M3 - Article

AN - SCOPUS:0032123765

SN - 0018-9383

VL - 45

SP - 1459

EP - 1467

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Abstract

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