A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Shyh Chyi Wong, Shyh Yuan Hsu, Yeong Her Wang, Mau Phon Houng, Shih Keng Cho

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.

Original languageEnglish
Pages (from-to)1459-1467
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume45
Issue number7
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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