A deep UV sensitive Ta2O5/a - IGZO TFT

C. J. Chiu; W. Y. Weng; S. J. Chang; Sheng Po Chang; T. H. Chang

doi:10.1109/JSEN.2011.2146770

A deep UV sensitive Ta₂O₅/a - IGZO TFT

C. J. Chiu, W. Y. Weng, S. J. Chang, Sheng Po Chang, T. H. Chang

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta₂O₅ gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm²Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10^-9 A to 5.56 × 10^-5 A, as we illuminated the sample with λ = 250 nm UV light when V_G was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 10⁶ for the fabricated Ta ₂O₅/a-IGZO TFT.

Original language	English
Article number	5755165
Pages (from-to)	2902-2905
Number of pages	4
Journal	IEEE Sensors Journal
Volume	11
Issue number	11
DOIs	https://doi.org/10.1109/JSEN.2011.2146770
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2011.2146770

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@article{f6d704d1cc2b4ab6a989cbc81563cb56,

title = "A deep UV sensitive Ta2O5/a - IGZO TFT",

abstract = "The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.",

author = "Chiu, {C. J.} and Weng, {W. Y.} and Chang, {S. J.} and Chang, {Sheng Po} and Chang, {T. H.}",

note = "Funding Information: Manuscript received March 27, 2011; accepted April 16, 2011. Date of publication April 25, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.",

year = "2011",

doi = "10.1109/JSEN.2011.2146770",

language = "English",

volume = "11",

pages = "2902--2905",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - A deep UV sensitive Ta2O5/a - IGZO TFT

AU - Chiu, C. J.

AU - Weng, W. Y.

AU - Chang, S. J.

AU - Chang, Sheng Po

AU - Chang, T. H.

N1 - Funding Information: Manuscript received March 27, 2011; accepted April 16, 2011. Date of publication April 25, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.

PY - 2011

Y1 - 2011

N2 - The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.

AB - The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.

UR - http://www.scopus.com/inward/record.url?scp=80455174836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80455174836&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2011.2146770

DO - 10.1109/JSEN.2011.2146770

M3 - Article

AN - SCOPUS:80455174836

SN - 1530-437X

VL - 11

SP - 2902

EP - 2905

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 11

M1 - 5755165

ER -

A deep UV sensitive Ta₂O₅/a - IGZO TFT

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