A deep UV sensitive Ta2O5/a - IGZO TFT

C. J. Chiu, W. Y. Weng, S. J. Chang, Sheng Po Chang, T. H. Chang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.

Original languageEnglish
Article number5755165
Pages (from-to)2902-2905
Number of pages4
JournalIEEE Sensors Journal
Issue number11
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering


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