The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.
|Number of pages||4|
|Journal||IEEE Sensors Journal|
|Publication status||Published - 2011|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering