A demonstration of half-metallicity in graphene using Mn3O 4 nanosheet

Sumit Mandal; Moni Baskey; Shyamal K. Saha

doi:10.1016/j.carbon.2013.05.002

A demonstration of half-metallicity in graphene using Mn₃O ₄ nanosheet

Sumit Mandal
, Moni Baskey
, Shyamal K. Saha

Academy of Innovative Semiconductor and Sustainable Manufacturing

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The recent prediction of the edge modification by a magnetic impurity spin to create half-metallicity in a graphene sheet is demonstrated. Ultrafine Mn₃O₄ sheets of size 10 nm are grown on graphene to observe the remarkable effect of half-metallicity with a 90% change in magnetoresistance at room temperature. The demonstration of a huge negative magnetoresistance using a magnetic impurity spin will make graphene a potential candidate for spintronic devices.

Original language	English
Pages (from-to)	254-259
Number of pages	6
Journal	Carbon
Volume	61
DOIs	https://doi.org/10.1016/j.carbon.2013.05.002
Publication status	Published - 2013 Sept

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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10.1016/j.carbon.2013.05.002

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title = "A demonstration of half-metallicity in graphene using Mn3O 4 nanosheet",

abstract = "The recent prediction of the edge modification by a magnetic impurity spin to create half-metallicity in a graphene sheet is demonstrated. Ultrafine Mn3O4 sheets of size 10 nm are grown on graphene to observe the remarkable effect of half-metallicity with a 90\% change in magnetoresistance at room temperature. The demonstration of a huge negative magnetoresistance using a magnetic impurity spin will make graphene a potential candidate for spintronic devices.",

author = "Sumit Mandal and Moni Baskey and Saha, \{Shyamal K.\}",

year = "2013",

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AU - Mandal, Sumit

AU - Baskey, Moni

AU - Saha, Shyamal K.

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Y1 - 2013/9

N2 - The recent prediction of the edge modification by a magnetic impurity spin to create half-metallicity in a graphene sheet is demonstrated. Ultrafine Mn3O4 sheets of size 10 nm are grown on graphene to observe the remarkable effect of half-metallicity with a 90% change in magnetoresistance at room temperature. The demonstration of a huge negative magnetoresistance using a magnetic impurity spin will make graphene a potential candidate for spintronic devices.

AB - The recent prediction of the edge modification by a magnetic impurity spin to create half-metallicity in a graphene sheet is demonstrated. Ultrafine Mn3O4 sheets of size 10 nm are grown on graphene to observe the remarkable effect of half-metallicity with a 90% change in magnetoresistance at room temperature. The demonstration of a huge negative magnetoresistance using a magnetic impurity spin will make graphene a potential candidate for spintronic devices.

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UR - https://www.scopus.com/pages/publications/84879691472#tab=citedBy

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DO - 10.1016/j.carbon.2013.05.002

M3 - Article

AN - SCOPUS:84879691472

SN - 0008-6223

VL - 61

SP - 254

EP - 259

JO - Carbon

JF - Carbon

ER -

A demonstration of half-metallicity in graphene using Mn₃O ₄ nanosheet

Abstract

All Science Journal Classification (ASJC) codes

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