A Determination of Interface State Energy During the Capture of Electrons and Holes Using DLTS

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Abstract

A quasi-equilibrium or a steady-state method using a transient capacitance technique for determining the interface energy is presented. During the carrier capture, a quasi-equilibrium or a steady state is established by adjusting the capture pulse voltage and the gate pulse bias. The quasi-Fermi level during capture intersects the interface state level which dominates the emission following the removal of the capture pulse. The interface state densities for samples fabricated in (100) and (111) orientations were given as examples. Capture cross section was also obtained using a similar procedure.

Original languageEnglish
Pages (from-to)819-821
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume26
Issue number5
DOIs
Publication statusPublished - 1979 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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