A dopingless FET with metal-insulator-semiconductor contacts

Kuo Hsing Kao, Liang Yu Chen

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

By adopting the charge-plasma concept, dopingless FETs with metal-semiconductor and metal-insulator-semiconductor (MIS) contacts in parallel at the source/drain (SD) have been studied in this letter. Currents are found to flow mainly through the MIS contacts for a given SD metal workfunction when the insulator thickness is thin enough. In order to avoid the possible penalty caused by Fermi level pinning, the dopingless FET with only SD MIS contacts has been proposed as well. The impacts of insulator material parameters, such as bandgap, electron affinity, dielectric constant, and physical thickness, on the electrical characteristics of the dopingless FET have been investigated systematically. Based on numerical simulations, this letter provides a general guideline with physical insights for designing dopingless FETs with high-permittivity insulator at the SD MIS contacts.

Original languageEnglish
Article number7742896
Pages (from-to)5-8
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number1
DOIs
Publication statusPublished - 2017 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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