A double-barrier-emitter triangular-barrier optoelectronic switch

Der Feng Guo, Jing Yuh Chen, Hung Ming Chuang, Chun Yuan Chen, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

Original languageEnglish
Pages (from-to)413-419
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume40
Issue number4
DOIs
Publication statusPublished - 2004 Apr 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A double-barrier-emitter triangular-barrier optoelectronic switch'. Together they form a unique fingerprint.

Cite this