A double-barrier-emitter triangular-barrier optoelectronic switch

Der Feng Guo; Jing Yuh Chen; Hung Ming Chuang; Chun Yuan Chen; Wen Chau Liu

doi:10.1109/JQE.2004.825113

A double-barrier-emitter triangular-barrier optoelectronic switch

Der Feng Guo, Jing Yuh Chen, Hung Ming Chuang, Chun Yuan Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

Original language	English
Pages (from-to)	413-419
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	40
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2004.825113
Publication status	Published - 2004 Apr

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2004.825113

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title = "A double-barrier-emitter triangular-barrier optoelectronic switch",

abstract = "In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.",

author = "Guo, {Der Feng} and Chen, {Jing Yuh} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received August 27, 2003; revised December 23, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 92-2218-E-013-001. D.-F. Guo is with the Department of Electronic Engineering, Chinese Air Force Academy, Kang-Shan, Kaohsiung, County, Taiwan, R.O.C. J.-Y. Chen, H.-M. Chuang, C.-Y. Chen, and W.-C. Liu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 70101, R.O.C. Digital Object Identifier 10.1109/JQE.2004.825113",

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doi = "10.1109/JQE.2004.825113",

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AU - Guo, Der Feng

AU - Chen, Jing Yuh

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received August 27, 2003; revised December 23, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 92-2218-E-013-001. D.-F. Guo is with the Department of Electronic Engineering, Chinese Air Force Academy, Kang-Shan, Kaohsiung, County, Taiwan, R.O.C. J.-Y. Chen, H.-M. Chuang, C.-Y. Chen, and W.-C. Liu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 70101, R.O.C. Digital Object Identifier 10.1109/JQE.2004.825113

PY - 2004/4

Y1 - 2004/4

N2 - In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

AB - In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

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A double-barrier-emitter triangular-barrier optoelectronic switch

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