A flat gain/power responses 6-18 GHz power amplifier MMIC with high pae by using transformer networks

Shu Jenn Yu, Wei Chou Hsu, Ching Sung Lee, Chlan Sern Chang, Chang Luen Wu, Ching Hsueh Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A two-stage power amplifier monolithic microwave integrated-circuit, operating between 6 and 18 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors is presented. This devised power amplifier has demonstrated flat gain and power responses over a wide bandwidth by employing a novel design approach of combined prematched LC network and multisection impedance transformer network. Superior gain flatness of ±1.5 dB and power flatness of ±1.1 dBm over 6-18 GHz bandwidth, respectively, have been successfully achieved. With a dual-bias configuration, the power amplifier shows average small-signal gain of 13 dB, 2-dB gain compression power of 32.4 dBm and high power-added efficiency (PAE) of 24-34.5%. In additions, by using off-chip combiner techniques, the balanced power amplifier shows superior maximum output power of 36.5 dBm and PAE of 22-33.1%.

Original languageEnglish
Pages (from-to)205-208
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume50
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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