A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu; C. C. Wang; Y. H. Wang; J. W. Huang; C. H. Chang; W. Wu; C. L. Wu; C. S. Chang

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu, C. C. Wang, Y. H. Wang, J. W. Huang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Original language	English
Pages	33-36
Number of pages	4
Publication status	Published - 2002 Jan 1
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: 2002 Oct 20 → 2002 Oct 23

Other

Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country	United States
City	Monterey, CA
Period	02-10-20 → 02-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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Cite this

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title = "A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier",

abstract = "In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.",

author = "Liu, {H. Z.} and Wang, {C. C.} and Wang, {Y. H.} and Huang, {J. W.} and Chang, {C. H.} and W. Wu and Wu, {C. L.} and Chang, {C. S.}",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "33--36",

note = "Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 20-10-2002 Through 23-10-2002",

}

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier. / Liu, H. Z.; Wang, C. C.; Wang, Y. H.; Huang, J. W.; Chang, C. H.; Wu, W.; Wu, C. L.; Chang, C. S.

2002. 33-36 Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Research output: Contribution to conference › Paper › peer-review

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AU - Liu, H. Z.

AU - Wang, C. C.

AU - Wang, Y. H.

AU - Huang, J. W.

AU - Chang, C. H.

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

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AB - In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

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