Abstract
In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.
| Original language | English |
|---|---|
| Pages | 33-36 |
| Number of pages | 4 |
| Publication status | Published - 2002 Jan 1 |
| Event | Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: 2002 Oct 20 → 2002 Oct 23 |
Other
| Other | Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) |
|---|---|
| Country | United States |
| City | Monterey, CA |
| Period | 02-10-20 → 02-10-23 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L., & Chang, C. S. (2002). A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier. 33-36. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.