A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu, C. C. Wang, Y. H. Wang, J. W. Huang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to conferencePaper

10 Citations (Scopus)

Abstract

In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Original languageEnglish
Pages33-36
Number of pages4
Publication statusPublished - 2002 Jan 1
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: 2002 Oct 202002 Oct 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period02-10-2002-10-23

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L., & Chang, C. S. (2002). A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier. 33-36. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.