A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu; C. C. Wang; Y. H. Wang; J. W. Huang; C. H. Chang; W. Wu; C. L. Wu; C. S. Chang

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu, C. C. Wang, Y. H. Wang, J. W. Huang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

10 Citations (Scopus)

Abstract

In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Original language	English
Pages	33-36
Number of pages	4
Publication status	Published - 2002
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: 2002 Oct 20 → 2002 Oct 23

Other

Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country/Territory	United States
City	Monterey, CA
Period	02-10-20 → 02-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier",

abstract = "In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.",

author = "Liu, {H. Z.} and Wang, {C. C.} and Wang, {Y. H.} and Huang, {J. W.} and Chang, {C. H.} and W. Wu and Wu, {C. L.} and Chang, {C. S.}",

year = "2002",

language = "English",

pages = "33--36",

note = "Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 20-10-2002 Through 23-10-2002",

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T1 - A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

AU - Liu, H. Z.

AU - Wang, C. C.

AU - Wang, Y. H.

AU - Huang, J. W.

AU - Chang, C. H.

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2002

Y1 - 2002

N2 - In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

AB - In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

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M3 - Paper

AN - SCOPUS:0036440703

SP - 33

EP - 36

T2 - Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)

Y2 - 20 October 2002 through 23 October 2002

ER -

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

Abstract

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All Science Journal Classification (ASJC) codes

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