A fully integrated 5 GHz low-voltage LNA using forward body bias technology

Chieh Pin Chang, Ja Hao Chen, Yeong Her Wang

Research output: Contribution to journalArticle

63 Citations (Scopus)


A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward body bias technology, implemented through a 0.18 μ RF CMOS technology, is demonstrated. By employing the current-reused and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 10.23 dB with a noise figure of 4.1 dB at 5 GHz, while consuming only 0.8 mW dc power with a low supply voltage of 0.6 V. The power consumption figure of merit (FOM1) and the tuning-range figure of merit (FOM2) are optimal at 12.79 dB/mW and 2.6 mW-1, respectively. The chip area is 0.89 ×0.89mm2.

Original languageEnglish
Article number4796234
Pages (from-to)176-178
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number3
Publication statusPublished - 2009 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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