This paper presents a compact X-band, 9 W AlGaAs/In-GaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate-length power PHEMT technology, a two-stage power amplifier is fabricated on a 3-mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small-signal gain, an average of 9 W continuous-wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering