Abstract
This paper presents a compact X-band, 9 W AlGaAs/In-GaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate-length power PHEMT technology, a two-stage power amplifier is fabricated on a 3-mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small-signal gain, an average of 9 W continuous-wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved.
Original language | English |
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Pages (from-to) | 257-261 |
Number of pages | 5 |
Journal | Microwave and Optical Technology Letters |
Volume | 49 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Feb |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering