A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Ray Jay Chiu, Che Hung Lin, Chih Cheng Wang, Mau-phon Houng, Yeong-Her Wang, Chuan Chien Hsu, Wang Wu, Chang Luen Wu, Chian Sern Chang

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 5017 input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4 dB small-signal gain and 34 dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24 dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5 GHz is also achieved.

Original languageEnglish
Pages (from-to)667-669
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume15
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Houng, M., Wang, Y-H., Hsu, C. C., Wu, W., Wu, C. L., & Chang, C. S. (2005). A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications. IEEE Microwave and Wireless Components Letters, 15(10), 667-669. https://doi.org/10.1109/LMWC.2005.856852