A fully matched ku-band 9W PHEMT MMIC high power amplifier

C. H. Lin, H. Z. Liu, C. K. Chu, H. K. Huang, Yeong-Her Wang, C. C. Liu, C. H. Chang, C. L. Wu, C. S. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.

Original languageEnglish
Title of host publication2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Pages165-168
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS - San Antonio, TX, United States
Duration: 2006 Nov 122006 Nov 15

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

Other2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
CountryUnited States
CitySan Antonio, TX
Period06-11-1206-11-15

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lin, C. H., Liu, H. Z., Chu, C. K., Huang, H. K., Wang, Y-H., Liu, C. C., ... Chang, C. S. (2006). A fully matched ku-band 9W PHEMT MMIC high power amplifier. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS (pp. 165-168). [4110009] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2006.319887