A fully matched ku-band 9W PHEMT MMIC high power amplifier

C. H. Lin; H. Z. Liu; C. K. Chu; H. K. Huang; Yeong-Her Wang; C. C. Liu; C. H. Chang; C. L. Wu; C. S. Chang

doi:10.1109/CSICS.2006.319887

A fully matched ku-band 9W PHEMT MMIC high power amplifier

C. H. Lin, H. Z. Liu, C. K. Chu, H. K. Huang, Yeong-Her Wang, C. C. Liu, C. H. Chang, C. L. Wu, C. S. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm² (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm²) at ku band reported to date.

Original language	English
Title of host publication	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Pages	165-168
Number of pages	4
DOIs	https://doi.org/10.1109/CSICS.2006.319887
Publication status	Published - 2006 Dec 1
Event	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS - San Antonio, TX, United States Duration: 2006 Nov 12 → 2006 Nov 15

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Other

Other	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Country	United States
City	San Antonio, TX
Period	06-11-12 → 06-11-15

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All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Lin, C. H., Liu, H. Z., Chu, C. K., Huang, H. K., Wang, Y-H., Liu, C. C., ... Chang, C. S. (2006). A fully matched ku-band 9W PHEMT MMIC high power amplifier. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS (pp. 165-168). [4110009] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2006.319887

@inproceedings{12c9c2f583134fa79580beb1301e52b9,

title = "A fully matched ku-band 9W PHEMT MMIC high power amplifier",

abstract = "A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30{\%} power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.",

author = "Lin, {C. H.} and Liu, {H. Z.} and Chu, {C. K.} and Huang, {H. K.} and Yeong-Her Wang and Liu, {C. C.} and Chang, {C. H.} and Wu, {C. L.} and Chang, {C. S.}",

year = "2006",

month = "12",

day = "1",

doi = "10.1109/CSICS.2006.319887",

language = "English",

isbn = "1424401267",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

pages = "165--168",

booktitle = "2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS",

note = "2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS ; Conference date: 12-11-2006 Through 15-11-2006",

}

Lin, CH, Liu, HZ, Chu, CK, Huang, HK, Wang, Y-H, Liu, CC, Chang, CH, Wu, CL & Chang, CS 2006, A fully matched ku-band 9W PHEMT MMIC high power amplifier. in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS., 4110009, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 165-168, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS, San Antonio, TX, United States, 06-11-12. https://doi.org/10.1109/CSICS.2006.319887

A fully matched ku-band 9W PHEMT MMIC high power amplifier. / Lin, C. H.; Liu, H. Z.; Chu, C. K.; Huang, H. K.; Wang, Yeong-Her; Liu, C. C.; Chang, C. H.; Wu, C. L.; Chang, C. S.

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS. 2006. p. 165-168 4110009 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lin, C. H.

AU - Liu, H. Z.

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AU - Huang, H. K.

AU - Wang, Yeong-Her

AU - Liu, C. C.

AU - Chang, C. H.

AU - Wu, C. L.

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N2 - A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.

AB - A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.

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Access to Document

10.1109/CSICS.2006.319887