Abstract
A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.
| Original language | English |
|---|---|
| Title of host publication | 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS |
| Pages | 165-168 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS - San Antonio, TX, United States Duration: 2006 Nov 12 → 2006 Nov 15 |
Publication series
| Name | Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC |
|---|---|
| ISSN (Print) | 1550-8781 |
Other
| Other | 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS |
|---|---|
| Country | United States |
| City | San Antonio, TX |
| Period | 06-11-12 → 06-11-15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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A fully matched ku-band 9W PHEMT MMIC high power amplifier. / Lin, C. H.; Liu, H. Z.; Chu, C. K.; Huang, H. K.; Wang, Yeong-Her; Liu, C. C.; Chang, C. H.; Wu, C. L.; Chang, C. S.
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS. 2006. p. 165-168 4110009 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A fully matched ku-band 9W PHEMT MMIC high power amplifier
AU - Lin, C. H.
AU - Liu, H. Z.
AU - Chu, C. K.
AU - Huang, H. K.
AU - Wang, Yeong-Her
AU - Liu, C. C.
AU - Chang, C. H.
AU - Wu, C. L.
AU - Chang, C. S.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.
AB - A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 nun × 2.46 nun) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm2) at ku band reported to date.
UR - http://www.scopus.com/inward/record.url?scp=46149114372&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46149114372&partnerID=8YFLogxK
U2 - 10.1109/CSICS.2006.319887
DO - 10.1109/CSICS.2006.319887
M3 - Conference contribution
SN - 1424401267
SN - 9781424401260
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
SP - 165
EP - 168
BT - 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
ER -