A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N2 ambiances

C. W. Hung; H. I. Chen; T. H. Tsai; L. Y. Chen; K. Y. Chu; W. C. Liu

doi:10.1109/EDSSC.2007.4450117

A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N₂ ambiances

C. W. Hung
, H. I. Chen
, T. H. Tsai
, L. Y. Chen
, K. Y. Chu
, W. C. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An interesting hydrogen sensor based on the Pd/GaAs heterostructure field-effect transistor (HFET) is fabricated and investigated under various hydrogen concentrations in air and N₂ environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H₂/N₂ (98 ppm H₂/air) at 403 K, a high sensitivity of 1295 μA/mm-ppm H₂/N₂ (275.8 μA/mm-ppm H₂/air) in 14 ppm H₂/N₂ (H ₂/air) at 303 K, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H₂/N₂ (H₂/air) at 363 K. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	283-286
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450117
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450117

Cite this

Hung, C. W., Chen, H. I., Tsai, T. H., Chen, L. Y., Chu, K. Y., & Liu, W. C. (2007). A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N₂ ambiances. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 283-286). Article 4450117 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450117

@inproceedings{325519a1d5914dfeafea3b67ca2fb65d,

title = "A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N2 ambiances",

abstract = "An interesting hydrogen sensor based on the Pd/GaAs heterostructure field-effect transistor (HFET) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 403 K, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H 2/air) at 303 K, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 363 K. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface.",

author = "Hung, \{C. W.\} and Chen, \{H. I.\} and Tsai, \{T. H.\} and Chen, \{L. Y.\} and Chu, \{K. Y.\} and Liu, \{W. C.\}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450117",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "283--286",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Hung, CW, Chen, HI, Tsai, TH, Chen, LY, Chu, KY & Liu, WC 2007, A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N₂ ambiances. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450117, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 283-286, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450117

A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N₂ ambiances. / Hung, C. W.; Chen, H. I.; Tsai, T. H. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 283-286 4450117 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N2 ambiances

AU - Hung, C. W.

AU - Chen, H. I.

AU - Tsai, T. H.

AU - Chen, L. Y.

AU - Chu, K. Y.

AU - Liu, W. C.

PY - 2007

Y1 - 2007

N2 - An interesting hydrogen sensor based on the Pd/GaAs heterostructure field-effect transistor (HFET) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 403 K, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H 2/air) at 303 K, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 363 K. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface.

AB - An interesting hydrogen sensor based on the Pd/GaAs heterostructure field-effect transistor (HFET) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 403 K, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H 2/air) at 303 K, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 363 K. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface.

UR - https://www.scopus.com/pages/publications/43049171863

UR - https://www.scopus.com/pages/publications/43049171863#tab=citedBy

U2 - 10.1109/EDSSC.2007.4450117

DO - 10.1109/EDSSC.2007.4450117

M3 - Conference contribution

AN - SCOPUS:43049171863

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 283

EP - 286

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Hung CW, Chen HI, Tsai TH, Chen LY, Chu KY, Liu WC. A GaAs-based heterostructure field-effect transistor-type hydrogen sensor in air and N₂ ambiances. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 283-286. 4450117. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450117