A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

H. H. Wang, D. W. Chou, J. Y. Wu, Yeong-Her Wang, Mau-phon Houng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages432-435
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 2000
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 2000 Sep 112000 Sep 13

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period00-09-1100-09-13

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Wang, H. H., Chou, D. W., Wu, J. Y., Wang, Y-H., & Houng, M. (2000). A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. In ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 432-435). [1503737] IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194807