A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

H. H. Wang; D. W. Chou; J. Y. Wu; Yeong-Her Wang; Mau-phon Houng

doi:10.1109/ESSDERC.2000.194807

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

H. H. Wang, D. W. Chou, J. Y. Wu, Yeong-Her Wang, Mau-phon Houng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	432-435
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194807
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 2000 Sep 11 → 2000 Sep 13

Other

Other	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	00-09-11 → 00-09-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/ESSDERC.2000.194807

Cite this

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title = "A GaAs device isolation technique by liquid phase chemical-enhanced oxidation",

abstract = "We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.",

author = "Wang, {H. H.} and Chou, {D. W.} and Wu, {J. Y.} and Yeong-Her Wang and Mau-phon Houng",

year = "2000",

doi = "10.1109/ESSDERC.2000.194807",

language = "English",

isbn = "9782863322482",

pages = "432--435",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

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Wang, HH, Chou, DW, Wu, JY, Wang, Y-H & Houng, M 2000, A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. in ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503737, IEEE Computer Society, pp. 432-435, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 00-09-11. https://doi.org/10.1109/ESSDERC.2000.194807

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. / Wang, H. H.; Chou, D. W.; Wu, J. Y.; Wang, Yeong-Her ; Houng, Mau-phon.

ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society, 2000. p. 432-435 1503737.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

AU - Wang, H. H.

AU - Chou, D. W.

AU - Wu, J. Y.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 2000

Y1 - 2000

N2 - We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

AB - We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

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DO - 10.1109/ESSDERC.2000.194807

M3 - Conference contribution

AN - SCOPUS:84907843395

SN - 9782863322482

SP - 432

EP - 435

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

Abstract

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