A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

H. H. Wang; D. W. Chou; J. Y. Wu; Yeong-Her Wang; Mau-phon Houng

doi:10.1109/ESSDERC.2000.194807

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

H. H. Wang, D. W. Chou, J. Y. Wu, Yeong-Her Wang, Mau-phon Houng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	432-435
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194807
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 2000 Sep 11 → 2000 Sep 13

Other

Other	30th European Solid-State Device Research Conference, ESSDERC 2000
Country	Ireland
City	Cork
Period	00-09-11 → 00-09-13

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

Wang, H. H., Chou, D. W., Wu, J. Y., Wang, Y-H., & Houng, M. (2000). A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. In ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 432-435). [1503737] IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194807

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title = "A GaAs device isolation technique by liquid phase chemical-enhanced oxidation",

abstract = "We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.",

author = "Wang, {H. H.} and Chou, {D. W.} and Wu, {J. Y.} and Yeong-Her Wang and Mau-phon Houng",

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Wang, HH, Chou, DW, Wu, JY, Wang, Y-H & Houng, M 2000, A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. in ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503737, IEEE Computer Society, pp. 432-435, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 00-09-11. https://doi.org/10.1109/ESSDERC.2000.194807

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation. / Wang, H. H.; Chou, D. W.; Wu, J. Y.; Wang, Yeong-Her ; Houng, Mau-phon.

ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society, 2000. p. 432-435 1503737.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

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AU - Wang, Yeong-Her

AU - Houng, Mau-phon

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N2 - We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

AB - We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.

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M3 - Conference contribution

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EP - 435

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

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Access to Document

10.1109/ESSDERC.2000.194807