Abstract
We have proposed a new technique of GaAs device isolation using selectively grown native oxide as an insulating material. The isolation technique is operated near room temperature with extremely simplified processes and apparatuses. The depth of isolation (oxide) area can be well controlled by the window width of photoresist masks utilized in the oxidation procedure. As compared with mesa isolation, better planarity and good insulating characteristics are achieved.
Original language | English |
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Title of host publication | ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference |
Publisher | IEEE Computer Society |
Pages | 432-435 |
Number of pages | 4 |
ISBN (Electronic) | 2863322486 |
ISBN (Print) | 9782863322482 |
DOIs | |
Publication status | Published - 2000 |
Event | 30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 2000 Sep 11 → 2000 Sep 13 |
Other
Other | 30th European Solid-State Device Research Conference, ESSDERC 2000 |
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Country | Ireland |
City | Cork |
Period | 00-09-11 → 00-09-13 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality