A GaAs double negative differential resistance device with a p+ AlGaAs base

K. F. Yarn, C. Y. Chang, Y. H. Wang, H. C. Wei, P. W. Sze, J. M. Jeng

Research output: Contribution to conferencePaperpeer-review

Abstract

We experimentally demonstrate a three-terminal i-GaAs/p+-AlGaAs/i-GaAs structure which exists two voltage-controllable and distinct N-shape negative differential resistance (NDR) regions at room temperature. Voltage extents in each NDR region are as large as 10 volts. Corresponding peak to valley current ratios (PVRs) for the first and second NDR regions are 43 and 7 at Vbe-5V, respectively. By inserting the p+-AlGaAs layer between undoped GaAs layers, two dimensional hole gas (DHG) may be formed. A tentative model responsible for two NDR regions based on the bipolar unipolar transition effect with the aid of tunneling effect is thus presented.

Original languageEnglish
DOIs
Publication statusPublished - 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A GaAs double negative differential resistance device with a p<sup>+</sup> AlGaAs base'. Together they form a unique fingerprint.

Cite this