A gate-free monolayer WSe 2 pn diode

Jhih Wei Chen, Shun Tsung Lo, Sheng Chin Ho, Sheng Shong Wong, Thi Hai Yen Vu, Xin Quan Zhang, Yi De Liu, Yu You Chiou, Yu Xun Chen, Jan Chi Yang, Yi Chun Chen, Ying Hao Chu, Yi Hsien Lee, Chung Jen Chung, Tse Ming Chen, Chia Hao Chen, Chung Lin Wu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

Original languageEnglish
Article number3143
JournalNature communications
Volume9
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

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Optics and Photonics
Photoelectron Spectroscopy
homojunctions
Ferroelectric materials
Carrier concentration
Monolayers
Diodes
Metals
diodes
Equipment and Supplies
Photoelectrons
Optoelectronic devices
Photonics
Transition metals
Heterojunctions
Electric properties
Electronic equipment
Spectroscopy
Polarization
optoelectronic devices

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Chen, Jhih Wei ; Lo, Shun Tsung ; Ho, Sheng Chin ; Wong, Sheng Shong ; Vu, Thi Hai Yen ; Zhang, Xin Quan ; Liu, Yi De ; Chiou, Yu You ; Chen, Yu Xun ; Yang, Jan Chi ; Chen, Yi Chun ; Chu, Ying Hao ; Lee, Yi Hsien ; Chung, Chung Jen ; Chen, Tse Ming ; Chen, Chia Hao ; Wu, Chung Lin. / A gate-free monolayer WSe 2 pn diode In: Nature communications. 2018 ; Vol. 9, No. 1.
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Chen, JW, Lo, ST, Ho, SC, Wong, SS, Vu, THY, Zhang, XQ, Liu, YD, Chiou, YY, Chen, YX, Yang, JC, Chen, YC, Chu, YH, Lee, YH, Chung, CJ, Chen, TM, Chen, CH & Wu, CL 2018, ' A gate-free monolayer WSe 2 pn diode ', Nature communications, vol. 9, no. 1, 3143. https://doi.org/10.1038/s41467-018-05326-x

A gate-free monolayer WSe 2 pn diode . / Chen, Jhih Wei; Lo, Shun Tsung; Ho, Sheng Chin; Wong, Sheng Shong; Vu, Thi Hai Yen; Zhang, Xin Quan; Liu, Yi De; Chiou, Yu You; Chen, Yu Xun; Yang, Jan Chi; Chen, Yi Chun; Chu, Ying Hao; Lee, Yi Hsien; Chung, Chung Jen; Chen, Tse Ming; Chen, Chia Hao; Wu, Chung Lin.

In: Nature communications, Vol. 9, No. 1, 3143, 01.12.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A gate-free monolayer WSe 2 pn diode

AU - Chen, Jhih Wei

AU - Lo, Shun Tsung

AU - Ho, Sheng Chin

AU - Wong, Sheng Shong

AU - Vu, Thi Hai Yen

AU - Zhang, Xin Quan

AU - Liu, Yi De

AU - Chiou, Yu You

AU - Chen, Yu Xun

AU - Yang, Jan Chi

AU - Chen, Yi Chun

AU - Chu, Ying Hao

AU - Lee, Yi Hsien

AU - Chung, Chung Jen

AU - Chen, Tse Ming

AU - Chen, Chia Hao

AU - Wu, Chung Lin

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

AB - Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

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