A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz

C. K. Chu, H. K. Huang, H. Z. Liu, C. H. Lin, Mau-phon Houng, Yeong-Her Wang, C. H. Chang, C. L. Wu, C. S. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDss, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSs, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 21dBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages211-214
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 2005 Dec 192005 Dec 21

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period05-12-1905-12-21

Fingerprint

Monolithic microwave integrated circuits
Power amplifiers
Wimax
Drain current
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chu, C. K., Huang, H. K., Liu, H. Z., Lin, C. H., Houng, M., Wang, Y-H., ... Chang, C. S. (2006). A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 211-214). [1635243] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635243
Chu, C. K. ; Huang, H. K. ; Liu, H. Z. ; Lin, C. H. ; Houng, Mau-phon ; Wang, Yeong-Her ; Chang, C. H. ; Wu, C. L. ; Chang, C. S. / A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. pp. 211-214 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).
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abstract = "A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDss, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSs, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 21dBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.",
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Chu, CK, Huang, HK, Liu, HZ, Lin, CH, Houng, M, Wang, Y-H, Chang, CH, Wu, CL & Chang, CS 2006, A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635243, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, pp. 211-214, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635243

A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. / Chu, C. K.; Huang, H. K.; Liu, H. Z.; Lin, C. H.; Houng, Mau-phon; Wang, Yeong-Her; Chang, C. H.; Wu, C. L.; Chang, C. S.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 211-214 1635243 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chu, C. K.

AU - Huang, H. K.

AU - Liu, H. Z.

AU - Lin, C. H.

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

AU - Chang, C. H.

AU - Wu, C. L.

AU - Chang, C. S.

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N2 - A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDss, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSs, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 21dBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.

AB - A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDss, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSs, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 21dBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.

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T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

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Chu CK, Huang HK, Liu HZ, Lin CH, Houng M, Wang Y-H et al. A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 211-214. 1635243. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635243