A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz

C. K. Chu, H. K. Huang, H. Z. Liu, C. H. Lin, M. P. Houng, Y. H. Wang, C. H. Chang, C. L. Wu, C. S. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A single supply 2W MMIC power amplifier, operating between 3.3GHz and 3.8GHz by implementing AlGaAs/InGaAs/GaAs PHEMT for the applications of WiMax, is demonstrated. Using the gate zero-bias configuration, i.e., VGS=0 and IDss, one can use only one single bias instead of dual bias in the depletion mode PHEMTs. This two-stage amplifier is designed by using a zero gate bias configuration i.e., VGS=0 and at saturated drain current IDSs, for class A power amplifier operation. The two-stage MMIC amplifier possesses the characteristics of 25.9dB small-signal gain and 34.0dBm 1-dB gain compression power. Moreover, with a single carrier output power level of 21dBm, very high linearity with a 47dBm third-order intercept point operating at 3.5GHz is also achieved.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages211-214
Number of pages4
ISBN (Print)0780393392, 9780780393394
DOIs
Publication statusPublished - 2005 Jan 1
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 2005 Dec 192005 Dec 21

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period05-12-1905-12-21

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chu, C. K., Huang, H. K., Liu, H. Z., Lin, C. H., Houng, M. P., Wang, Y. H., ... Chang, C. S. (2005). A gate zero-bias 2W PHEMT power amplifier operating at 3.5 GHz. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 211-214). [1635243] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635243