This work presents a novel gated-diode SCRincorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reversebiased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Accepted/In press - 2021|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering