A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P+ Junction Modulation

Chih Yao Huang, Quo Ker Chen, Ji Fan Chi, Tzuen Hsi Huang

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a novel gated-diode SCRincorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reversebiased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.

Original languageEnglish
JournalIEEE Transactions on Device and Materials Reliability
DOIs
Publication statusAccepted/In press - 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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