A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P+Junction Modulation

Chih Yao Huang, Quo Ker Chen, Ji Fan Chi, Tzuen Hsi Huang

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a novel gated- diode SCR-incorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reverse-biased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.

Original languageEnglish
Article number11
Pages (from-to)64-69
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume21
Issue number1
DOIs
Publication statusPublished - 2021 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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