A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier

Shang Wen Chang; Edward Yi Chang; Cheng Shih Lee; Ke Shian Chen; Chao Wei Tseng; Yong Ye Tu; Ching Ting Lee

doi:10.1143/JJAP.44.L899

A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier

Shang Wen Chang
, Edward Yi Chang
, Cheng Shih Lee
, Ke Shian Chen
, Chao Wei Tseng
, Yong Ye Tu
, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350°C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density J_C = 80 kA/cm² for 24 h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200°C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.

Original language	English
Pages (from-to)	L899-L900
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	28-32
DOIs	https://doi.org/10.1143/JJAP.44.L899
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/JJAP.44.L899

Cite this

@article{3633a390950f4a35af592f5c76e6f51b,

title = "A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier",

abstract = "A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350°C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density JC = 80 kA/cm2 for 24 h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200°C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.",

author = "Chang, \{Shang Wen\} and Chang, \{Edward Yi\} and Lee, \{Cheng Shih\} and Chen, \{Ke Shian\} and Tseng, \{Chao Wei\} and Tu, \{Yong Ye\} and Lee, \{Ching Ting\}",

year = "2005",

doi = "10.1143/JJAP.44.L899",

language = "English",

volume = "44",

pages = "L899--L900",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "28-32",

}

TY - JOUR

T1 - A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier

AU - Chang, Shang Wen

AU - Chang, Edward Yi

AU - Lee, Cheng Shih

AU - Chen, Ke Shian

AU - Tseng, Chao Wei

AU - Tu, Yong Ye

AU - Lee, Ching Ting

PY - 2005

Y1 - 2005

N2 - A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350°C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density JC = 80 kA/cm2 for 24 h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200°C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.

AB - A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350°C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density JC = 80 kA/cm2 for 24 h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200°C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.

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UR - https://www.scopus.com/pages/publications/30344457876#tab=citedBy

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DO - 10.1143/JJAP.44.L899

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SN - 0021-4922

VL - 44

SP - L899-L900

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 28-32

ER -

A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier

Abstract

All Science Journal Classification (ASJC) codes

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