Abstract
The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 1589-1593 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2012 Mar 22 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering