A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Wen-Chau Liu, W. L. Chang, J. Y. Chen, H. J. Pan, W. C. Wang, K. H. Yu, S. C. Feng

Research output: Contribution to conferencePaper

Abstract

A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

Original languageEnglish
DOIs
Publication statusPublished - 1999 Dec 1
Event34th Intersociety Energy Conversion Engineering Conference - Vancouver, BC, Canada
Duration: 1999 Aug 21999 Aug 5

Other

Other34th Intersociety Energy Conversion Engineering Conference
CountryCanada
CityVancouver, BC
Period99-08-0299-08-05

All Science Journal Classification (ASJC) codes

  • Automotive Engineering
  • Safety, Risk, Reliability and Quality
  • Pollution
  • Industrial and Manufacturing Engineering

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