A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS

Chieh Pin Chang, Jian An Hou, Jionguang Su, Chih Wei Chen, Tsyr Shyang Liou, Shyh Chyi Wong, Yeong-Her Wang

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and ±4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection.

Original languageEnglish
Article number1717520
Pages (from-to)612-614
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume16
Issue number11
DOIs
Publication statusPublished - 2006 Nov 1

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power gain
Low noise amplifiers
human body
high gain
low noise
CMOS
Electrostatic discharge
amplifiers
Noise figure
Electric potential
electric potential
electrostatics
output

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chang, Chieh Pin ; Hou, Jian An ; Su, Jionguang ; Chen, Chih Wei ; Liou, Tsyr Shyang ; Wong, Shyh Chyi ; Wang, Yeong-Her. / A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS. In: IEEE Microwave and Wireless Components Letters. 2006 ; Vol. 16, No. 11. pp. 612-614.
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abstract = "A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and ±4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection.",
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A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS. / Chang, Chieh Pin; Hou, Jian An; Su, Jionguang; Chen, Chih Wei; Liou, Tsyr Shyang; Wong, Shyh Chyi; Wang, Yeong-Her.

In: IEEE Microwave and Wireless Components Letters, Vol. 16, No. 11, 1717520, 01.11.2006, p. 612-614.

Research output: Contribution to journalArticle

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T1 - A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS

AU - Chang, Chieh Pin

AU - Hou, Jian An

AU - Su, Jionguang

AU - Chen, Chih Wei

AU - Liou, Tsyr Shyang

AU - Wong, Shyh Chyi

AU - Wang, Yeong-Her

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AB - A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and ±4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection.

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