TY - GEN
T1 - A high-isolation 60GHz CMOS transmit/receive switch
AU - Kuo, Chi Shin
AU - Kuo, Hsin Chih
AU - Chuang, Huey Ru
AU - Chen, Chu Yu
AU - Huang, Tzuen Hsi
PY - 2011
Y1 - 2011
N2 - This paper presents a 60GHz high-isolation CMOS single-pole double-throw (SPDT) transmitter/receiver (T/R) switch fabricated with TSMC standard 90-nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved by using the body-floating technique. The leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The top metal (M9) is mainly adopted for designing signal paths and the microstrip-line matching elements. In order to minimize the substrate loss, the first metal (M1) as the ground plane is used in this design. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64GHz. At the center frequency of 60GHz, the port isolation is higher than 34 dB and the input 1-dB compression point (IP1dB) is +6.9 dBm.
AB - This paper presents a 60GHz high-isolation CMOS single-pole double-throw (SPDT) transmitter/receiver (T/R) switch fabricated with TSMC standard 90-nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved by using the body-floating technique. The leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The top metal (M9) is mainly adopted for designing signal paths and the microstrip-line matching elements. In order to minimize the substrate loss, the first metal (M1) as the ground plane is used in this design. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64GHz. At the center frequency of 60GHz, the port isolation is higher than 34 dB and the input 1-dB compression point (IP1dB) is +6.9 dBm.
UR - https://www.scopus.com/pages/publications/79960831550
UR - https://www.scopus.com/pages/publications/79960831550#tab=citedBy
U2 - 10.1109/RFIC.2011.5940638
DO - 10.1109/RFIC.2011.5940638
M3 - Conference contribution
AN - SCOPUS:79960831550
SN - 9781424482931
T3 - Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
BT - 2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011 - Digest of Papers
T2 - 2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011
Y2 - 5 June 2011 through 7 June 2011
ER -