A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

C. Y. Ou, C. Y. Hsu, H. R. Lin, Huey-Ru Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P 1dB ) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009
Subtitle of host publicationScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages250-253
Number of pages4
Publication statusPublished - 2009 Dec 28
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
Duration: 2009 Sep 282009 Oct 2

Publication series

NameEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
CountryItaly
CityRome
Period09-09-2809-10-02

Fingerprint

Switches
Insertion losses
Transmitters
Poles
Demonstrations

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ou, C. Y., Hsu, C. Y., Lin, H. R., & Chuang, H-R. (2009). A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 (pp. 250-253). [5295917] (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).
Ou, C. Y. ; Hsu, C. Y. ; Lin, H. R. ; Chuang, Huey-Ru. / A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. pp. 250-253 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).
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title = "A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process",
abstract = "A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P 1dB ) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.",
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Ou, CY, Hsu, CY, Lin, HR & Chuang, H-R 2009, A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. in European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009., 5295917, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 250-253, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, Italy, 09-09-28.

A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. / Ou, C. Y.; Hsu, C. Y.; Lin, H. R.; Chuang, Huey-Ru.

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 250-253 5295917 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P 1dB ) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

AB - A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P 1dB ) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

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Ou CY, Hsu CY, Lin HR, Chuang H-R. A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 250-253. 5295917. (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).