A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

C. Y. Ou; C. Y. Hsu; H. R. Lin; H. R. Chuang

A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

C. Y. Ou, C. Y. Hsu, H. R. Lin, H. R. Chuang

Institute of Computer and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P_1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

Original language	English
Title of host publication	European Microwave Week 2009, EuMW 2009
Subtitle of host publication	Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages	250-253
Number of pages	4
Publication status	Published - 2009 Dec 28
Event	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 2009 Sept 28 → 2009 Oct 2

Publication series

Name	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Other

Other	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Country/Territory	Italy
City	Rome
Period	09-09-28 → 09-10-02

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

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Ou, C. Y., Hsu, C. Y., Lin, H. R., & Chuang, H. R. (2009). A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 (pp. 250-253). Article 5295917 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Ou, C. Y. ; Hsu, C. Y. ; Lin, H. R. et al. / A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. pp. 250-253 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

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title = "A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process",

abstract = "A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.",

author = "Ou, {C. Y.} and Hsu, {C. Y.} and Lin, {H. R.} and Chuang, {H. R.}",

year = "2009",

month = dec,

day = "28",

language = "English",

isbn = "9782874870125",

series = "European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009",

pages = "250--253",

booktitle = "European Microwave Week 2009, EuMW 2009",

note = "European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 ; Conference date: 28-09-2009 Through 02-10-2009",

}

Ou, CY, Hsu, CY, Lin, HR & Chuang, HR 2009, A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. in European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009., 5295917, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 250-253, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, Italy, 09-09-28.

A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. / Ou, C. Y.; Hsu, C. Y.; Lin, H. R. et al.
European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 250-253 5295917 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

AU - Ou, C. Y.

AU - Hsu, C. Y.

AU - Lin, H. R.

AU - Chuang, H. R.

PY - 2009/12/28

Y1 - 2009/12/28

N2 - A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

AB - A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

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M3 - Conference contribution

AN - SCOPUS:72449192159

SN - 9782874870125

T3 - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

SP - 250

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BT - European Microwave Week 2009, EuMW 2009

T2 - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Y2 - 28 September 2009 through 2 October 2009

ER -

Ou CY, Hsu CY, Lin HR, Chuang HR. A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 250-253. 5295917. (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

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