A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

C. Y. Ou, C. Y. Hsu, H. R. Lin, H. R. Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009
Subtitle of host publicationScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages250-253
Number of pages4
Publication statusPublished - 2009 Dec 28
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
Duration: 2009 Sep 282009 Oct 2

Publication series

NameEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Country/TerritoryItaly
CityRome
Period09-09-2809-10-02

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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