A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel

Hir Ming Shieh, Wei-Chou Hsu, Rong Tay Hsu, Chang Luen Wu, Tien Shou Wu

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number12
DOIs
Publication statusPublished - 1993 Jan 1

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Transconductance
High electron mobility transistors
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Leakage currents
Current density
Chemical analysis
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel",
abstract = "A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.",
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A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel. / Shieh, Hir Ming; Hsu, Wei-Chou; Hsu, Rong Tay; Wu, Chang Luen; Wu, Tien Shou.

In: IEEE Electron Device Letters, Vol. 14, No. 12, 01.01.1993, p. 581-583.

Research output: Contribution to journalArticle

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