A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering