A High Performance Symmetric Double 6-Doped GaAs/InGaAs/GaAs Pseudomorphic HFET’s Grown by MOCVD

Wei Chou Hsu, Hir Ming Shieh, Chang Luen Wu, Tien Shou Wu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

A high performance double δ— doped GaAs/InO.25 Gao.75 As/GaAs pseudomorphic HFET’s grown by low pressure MOCVD is reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 µm gate length, are achieved.

Original languageEnglish
Pages (from-to)456-457
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume41
Issue number3
DOIs
Publication statusPublished - 1994 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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