@article{db55e21362b74f18b36fe9b1d39fd36e,
title = "A High Performance Symmetric Double 6-Doped GaAs/InGaAs/GaAs Pseudomorphic HFET{\textquoteright}s Grown by MOCVD",
abstract = "A high performance double δ— doped GaAs/InO.25 Gao.75 As/GaAs pseudomorphic HFET{\textquoteright}s grown by low pressure MOCVD is reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 µm gate length, are achieved.",
author = "Hsu, {Wei Chou} and Shieh, {Hir Ming} and Wu, {Chang Luen} and Wu, {Tien Shou}",
note = "Funding Information: The epilayers studied were grown on a (100)-oriented semi-insulating GaAs substrate by a computer-controlled LP-MOCVD [7]. The chamber pressure was 80 torr. Trimethylindium (TMI), triethylgallium (TEG), arsine (ASH:,), and silane (SiH.1) were used as the In, Ca. and As sources, and /?-type dopant, respectively. The Manuscript received April 29, 1993: revised October 19, 1993. The review of this brief was arranged by Associate Editor I. Xu. This work was supported by the National Science Council, Republic of China. under contract number NSC 82-0304-E006-244. The authors are with Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. IEEE Log Number 92 IS 148.",
year = "1994",
month = mar,
doi = "10.1109/16.275237",
language = "English",
volume = "41",
pages = "456--457",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}