A high performance double δ— doped GaAs/InO.25 Gao.75 As/GaAs pseudomorphic HFET’s grown by low pressure MOCVD is reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 µm gate length, are achieved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering