A high PSR over wideband frequency range low dropout voltage regulator

Huei Sheng Jhuang, Jia Hui Wang, Sheng Wen Lai, Chien-Hung Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An improved low dropout regulator (LDO) with high power supply rejection (PSR) over wideband frequency range is presented in this paper. The proposed design employs the supply ripple subtraction and high-pass filtering to achieve high PSR performance. The proposed LDO is fabricated by TSMC 0.35μm 2-poly 4-metal CMOS process. The simulation results for a 50-mA load current show that the PSR is -69 dB at 10 kHz, -59 dB at 100 kHz, -53 dB at 1 MHz, and -58 dB at 10 MHz. The results show that the proposed design is suitable for switching mode DC-DC converter and SoC applications. The active area of the LDO is 270 × 320 μm2.

Original languageEnglish
Title of host publication1st International Conference on Green Circuits and Systems, ICGCS 2010
Pages508-511
Number of pages4
DOIs
Publication statusPublished - 2010 Sep 20
Event1st International Conference on Green Circuits and Systems, ICGCS 2010 - Shanghai, China
Duration: 2010 Jun 212010 Jun 23

Publication series

Name1st International Conference on Green Circuits and Systems, ICGCS 2010

Other

Other1st International Conference on Green Circuits and Systems, ICGCS 2010
CountryChina
CityShanghai
Period10-06-2110-06-23

Fingerprint

Voltage regulators
DC-DC converters
Metals
System-on-chip

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jhuang, H. S., Wang, J. H., Lai, S. W., & Tsai, C-H. (2010). A high PSR over wideband frequency range low dropout voltage regulator. In 1st International Conference on Green Circuits and Systems, ICGCS 2010 (pp. 508-511). [5543010] (1st International Conference on Green Circuits and Systems, ICGCS 2010). https://doi.org/10.1109/ICGCS.2010.5543010
Jhuang, Huei Sheng ; Wang, Jia Hui ; Lai, Sheng Wen ; Tsai, Chien-Hung. / A high PSR over wideband frequency range low dropout voltage regulator. 1st International Conference on Green Circuits and Systems, ICGCS 2010. 2010. pp. 508-511 (1st International Conference on Green Circuits and Systems, ICGCS 2010).
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abstract = "An improved low dropout regulator (LDO) with high power supply rejection (PSR) over wideband frequency range is presented in this paper. The proposed design employs the supply ripple subtraction and high-pass filtering to achieve high PSR performance. The proposed LDO is fabricated by TSMC 0.35μm 2-poly 4-metal CMOS process. The simulation results for a 50-mA load current show that the PSR is -69 dB at 10 kHz, -59 dB at 100 kHz, -53 dB at 1 MHz, and -58 dB at 10 MHz. The results show that the proposed design is suitable for switching mode DC-DC converter and SoC applications. The active area of the LDO is 270 × 320 μm2.",
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Jhuang, HS, Wang, JH, Lai, SW & Tsai, C-H 2010, A high PSR over wideband frequency range low dropout voltage regulator. in 1st International Conference on Green Circuits and Systems, ICGCS 2010., 5543010, 1st International Conference on Green Circuits and Systems, ICGCS 2010, pp. 508-511, 1st International Conference on Green Circuits and Systems, ICGCS 2010, Shanghai, China, 10-06-21. https://doi.org/10.1109/ICGCS.2010.5543010

A high PSR over wideband frequency range low dropout voltage regulator. / Jhuang, Huei Sheng; Wang, Jia Hui; Lai, Sheng Wen; Tsai, Chien-Hung.

1st International Conference on Green Circuits and Systems, ICGCS 2010. 2010. p. 508-511 5543010 (1st International Conference on Green Circuits and Systems, ICGCS 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - An improved low dropout regulator (LDO) with high power supply rejection (PSR) over wideband frequency range is presented in this paper. The proposed design employs the supply ripple subtraction and high-pass filtering to achieve high PSR performance. The proposed LDO is fabricated by TSMC 0.35μm 2-poly 4-metal CMOS process. The simulation results for a 50-mA load current show that the PSR is -69 dB at 10 kHz, -59 dB at 100 kHz, -53 dB at 1 MHz, and -58 dB at 10 MHz. The results show that the proposed design is suitable for switching mode DC-DC converter and SoC applications. The active area of the LDO is 270 × 320 μm2.

AB - An improved low dropout regulator (LDO) with high power supply rejection (PSR) over wideband frequency range is presented in this paper. The proposed design employs the supply ripple subtraction and high-pass filtering to achieve high PSR performance. The proposed LDO is fabricated by TSMC 0.35μm 2-poly 4-metal CMOS process. The simulation results for a 50-mA load current show that the PSR is -69 dB at 10 kHz, -59 dB at 100 kHz, -53 dB at 1 MHz, and -58 dB at 10 MHz. The results show that the proposed design is suitable for switching mode DC-DC converter and SoC applications. The active area of the LDO is 270 × 320 μm2.

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Jhuang HS, Wang JH, Lai SW, Tsai C-H. A high PSR over wideband frequency range low dropout voltage regulator. In 1st International Conference on Green Circuits and Systems, ICGCS 2010. 2010. p. 508-511. 5543010. (1st International Conference on Green Circuits and Systems, ICGCS 2010). https://doi.org/10.1109/ICGCS.2010.5543010