A high-responsivity GaN nanowire UV photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, G. J. Huang

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)

Abstract

The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

Original languageEnglish
Article number5560711
Pages (from-to)996-1001
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume17
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A high-responsivity GaN nanowire UV photodetector'. Together they form a unique fingerprint.

Cite this