A high-responsivity GaN nanowire UV photodetector

W. Y. Weng; T. J. Hsueh; S. J. Chang; S. B. Wang; H. T. Hsueh; G. J. Huang

doi:10.1109/JSTQE.2010.2060715

A high-responsivity GaN nanowire UV photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, G. J. Huang

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

The authors report the conversion of β-Ga₂O₃ nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

Original language	English
Article number	5560711
Pages (from-to)	996-1001
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2060715
Publication status	Published - 2011 Jul

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2010.2060715

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@article{5e76fc3a9e224c00bc3c1798dfcc52ff,

title = "A high-responsivity GaN nanowire UV photodetector",

abstract = "The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.",

author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Wang, {S. B.} and Hsueh, {H. T.} and Huang, {G. J.}",

note = "Funding Information: Manuscript received May 4, 2010; revised June 20, 2010; accepted July 19, 2010. Date of publication September 2, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",

year = "2011",

month = jul,

doi = "10.1109/JSTQE.2010.2060715",

language = "English",

volume = "17",

pages = "996--1001",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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T1 - A high-responsivity GaN nanowire UV photodetector

AU - Weng, W. Y.

AU - Hsueh, T. J.

AU - Chang, S. J.

AU - Wang, S. B.

AU - Hsueh, H. T.

AU - Huang, G. J.

N1 - Funding Information: Manuscript received May 4, 2010; revised June 20, 2010; accepted July 19, 2010. Date of publication September 2, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.

PY - 2011/7

Y1 - 2011/7

N2 - The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

AB - The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

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ER -

A high-responsivity GaN nanowire UV photodetector

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