A high-sensitive Pd/InGaP transistor hydrogen sensor

Chung Yeh Wu, Chin Tien Lin, Yen I. Chou, Chieng Chi Tung, Wen-Chau Liu, Huey-Ing Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1% and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.

Original languageEnglish
Title of host publicationESSDERC07 - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages442-445
Number of pages4
ISBN (Print)1424411238, 9781424411238
DOIs
Publication statusPublished - 2008 Jan 1
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: 2007 Sep 112007 Sep 13

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume2007

Other

OtherESSDERC 2007 - 37th European Solid-State Device Research Conference
CountryGermany
CityMunich
Period07-09-1107-09-13

Fingerprint

Hydrogen
Transistors
Sensors
Electroless plating
Electric current control
Electric potential
High electron mobility transistors
Current voltage characteristics
Air
Microelectronics
Temperature
Modulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, C. Y., Lin, C. T., Chou, Y. I., Tung, C. C., Liu, W-C., & Chen, H-I. (2008). A high-sensitive Pd/InGaP transistor hydrogen sensor. In ESSDERC07 - 2007 37th European Solid State Device Research Conference (pp. 442-445). [4430973] (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430973
Wu, Chung Yeh ; Lin, Chin Tien ; Chou, Yen I. ; Tung, Chieng Chi ; Liu, Wen-Chau ; Chen, Huey-Ing. / A high-sensitive Pd/InGaP transistor hydrogen sensor. ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2008. pp. 442-445 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference).
@inproceedings{6963356a5f5d48f28faaf5c22aedd48f,
title = "A high-sensitive Pd/InGaP transistor hydrogen sensor",
abstract = "In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1{\%} and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 {\%} at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90{\%} response at 1 {\%} H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.",
author = "Wu, {Chung Yeh} and Lin, {Chin Tien} and Chou, {Yen I.} and Tung, {Chieng Chi} and Wen-Chau Liu and Huey-Ing Chen",
year = "2008",
month = "1",
day = "1",
doi = "10.1109/ESSDERC.2007.4430973",
language = "English",
isbn = "1424411238",
series = "ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "442--445",
booktitle = "ESSDERC07 - 2007 37th European Solid State Device Research Conference",
address = "United States",

}

Wu, CY, Lin, CT, Chou, YI, Tung, CC, Liu, W-C & Chen, H-I 2008, A high-sensitive Pd/InGaP transistor hydrogen sensor. in ESSDERC07 - 2007 37th European Solid State Device Research Conference., 4430973, ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, vol. 2007, IEEE Computer Society, pp. 442-445, ESSDERC 2007 - 37th European Solid-State Device Research Conference, Munich, Germany, 07-09-11. https://doi.org/10.1109/ESSDERC.2007.4430973

A high-sensitive Pd/InGaP transistor hydrogen sensor. / Wu, Chung Yeh; Lin, Chin Tien; Chou, Yen I.; Tung, Chieng Chi; Liu, Wen-Chau; Chen, Huey-Ing.

ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2008. p. 442-445 4430973 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A high-sensitive Pd/InGaP transistor hydrogen sensor

AU - Wu, Chung Yeh

AU - Lin, Chin Tien

AU - Chou, Yen I.

AU - Tung, Chieng Chi

AU - Liu, Wen-Chau

AU - Chen, Huey-Ing

PY - 2008/1/1

Y1 - 2008/1/1

N2 - In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1% and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.

AB - In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1% and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.

UR - http://www.scopus.com/inward/record.url?scp=39549106021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39549106021&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2007.4430973

DO - 10.1109/ESSDERC.2007.4430973

M3 - Conference contribution

SN - 1424411238

SN - 9781424411238

T3 - ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

SP - 442

EP - 445

BT - ESSDERC07 - 2007 37th European Solid State Device Research Conference

PB - IEEE Computer Society

ER -

Wu CY, Lin CT, Chou YI, Tung CC, Liu W-C, Chen H-I. A high-sensitive Pd/InGaP transistor hydrogen sensor. In ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society. 2008. p. 442-445. 4430973. (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2007.4430973