TY - GEN
T1 - A high-sensitive Pd/InGaP transistor hydrogen sensor
AU - Wu, Chung Yeh
AU - Lin, Chin Tien
AU - Chou, Yen I.
AU - Tung, Chieng Chi
AU - Liu, Wen Chau
AU - Chen, Huey Ing
PY - 2007/1/1
Y1 - 2007/1/1
N2 - In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1% and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.
AB - In this work, the electroless plated (EP) Pd/InGaP high electron mobility transistor (HEMT) was firstly employed for hydrogen sensing. The current-voltage (I-V) characteristics under hydrogen concentrations of 5ppm-1% and temperatures of 303-503K were investigated. Experimentally, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method, and the studied devices exhibited excellent current-voltage characteristics with superior current control ability. For hydrogen sensing performances, the studied EP device demonstrated low detection limit, high sensitivity, and fast response. As compared with the thermal evaporated (TE) device, larger current variations can be achieved by the EP device. Even at extremely low hydrogen concentration, e.g., 4.3 ppm H2/air, obvious current modulation was found. The maximum relative sensitivity reaches up to 428 % at a optimal gate voltage of -0.75 V. Furthermore, the transient detections showed that the sensing response was fairly fast, especially at high concentrations and high temperatures. At detection temperature of 403 K, the time for 90% response at 1 % H2/air was within 4 seconds. These excellent sensing performances of the EP device indeed made it promising and competitive in future developments of smart hydrogen sensors integrated microelectronic systems.
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U2 - 10.1109/ESSDERC.2007.4430973
DO - 10.1109/ESSDERC.2007.4430973
M3 - Conference contribution
SN - 1424411238
SN - 9781424411238
T3 - ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
SP - 442
EP - 445
BT - ESSDERC07 - 2007 37th European Solid State Device Research Conference
PB - IEEE Computer Society
T2 - ESSDERC 2007 - 37th European Solid-State Device Research Conference
Y2 - 11 September 2007 through 13 September 2007
ER -