A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer

Chen Fu Lin, Ying Zong Juang, Hann Huei Tsai, Hsin Hao Liao, Ping Hong Chen, Mei-Jywan Syu, Chien Cheng Fu, Ruey Lue Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a complementary metal-oxide-semiconductor (CMOS) compatible urea enzyme field effect transistor (FET) without enzyme immobilization. The natural formed aluminum oxide (Al2O3) above the top metal is used as the hydrogen sensing membrane. All the devices were fabricated by TSMC 0.35μm 2P4M CMOS process. In order to realize the micro sensing biological sensing system, the traditional Ag/AgCl reference electrode is replaced by the pseudo Ag/AgCl reference electrode in this study. First, the pH-FET is measured with the pseudo Ag/AgCl reference electrode. The sensitivity is 52.7mV/pH. Then, the droplet contains urea, urease, and Tris buffer solution was adopted above the sensing area. It gives a linear response when the urea concentration is varied from 1∼11mM. And it shows a slope of 88.7mV/mM. This result demonstrates that a CMOS compatible urea biosensor could be realized without immobilizing the urease above the sensing area.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period12-10-2812-10-31

Fingerprint

Field effect transistors
Urea
Enzymes
Metals
Electrodes
Enzyme immobilization
Biosensors
Membranes
Aluminum
Hydrogen
Oxides
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lin, C. F., Juang, Y. Z., Tsai, H. H., Liao, H. H., Chen, P. H., Syu, M-J., ... Wang, R. L. (2012). A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer. In IEEE SENSORS 2012 - Proceedings [6411439] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411439
Lin, Chen Fu ; Juang, Ying Zong ; Tsai, Hann Huei ; Liao, Hsin Hao ; Chen, Ping Hong ; Syu, Mei-Jywan ; Fu, Chien Cheng ; Wang, Ruey Lue. / A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer. IEEE SENSORS 2012 - Proceedings. 2012. (Proceedings of IEEE Sensors).
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Lin, CF, Juang, YZ, Tsai, HH, Liao, HH, Chen, PH, Syu, M-J, Fu, CC & Wang, RL 2012, A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer. in IEEE SENSORS 2012 - Proceedings., 6411439, Proceedings of IEEE Sensors, 11th IEEE SENSORS 2012 Conference, Taipei, Taiwan, 12-10-28. https://doi.org/10.1109/ICSENS.2012.6411439

A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer. / Lin, Chen Fu; Juang, Ying Zong; Tsai, Hann Huei; Liao, Hsin Hao; Chen, Ping Hong; Syu, Mei-Jywan; Fu, Chien Cheng; Wang, Ruey Lue.

IEEE SENSORS 2012 - Proceedings. 2012. 6411439 (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This paper presents a complementary metal-oxide-semiconductor (CMOS) compatible urea enzyme field effect transistor (FET) without enzyme immobilization. The natural formed aluminum oxide (Al2O3) above the top metal is used as the hydrogen sensing membrane. All the devices were fabricated by TSMC 0.35μm 2P4M CMOS process. In order to realize the micro sensing biological sensing system, the traditional Ag/AgCl reference electrode is replaced by the pseudo Ag/AgCl reference electrode in this study. First, the pH-FET is measured with the pseudo Ag/AgCl reference electrode. The sensitivity is 52.7mV/pH. Then, the droplet contains urea, urease, and Tris buffer solution was adopted above the sensing area. It gives a linear response when the urea concentration is varied from 1∼11mM. And it shows a slope of 88.7mV/mM. This result demonstrates that a CMOS compatible urea biosensor could be realized without immobilizing the urease above the sensing area.

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Lin CF, Juang YZ, Tsai HH, Liao HH, Chen PH, Syu M-J et al. A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer. In IEEE SENSORS 2012 - Proceedings. 2012. 6411439. (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411439