A hybrid CO2 laser processing for silicon etching

Chen-Kuei Chung, M. Y. Wu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel approach to silicon (Si) etching has been demonstrated using glass assisted CO2 laser processing. Conventional Si etching can be performed by wet etching, dry etching, Nd:YAG or UV lasers. No CO2 laser was used to etch Si due to the absorption problem. We have etched Si with the assistance of glass beneath the Si. This approach changes light absorption behavior of Si and makes Si be etched from the top surface toward the interface. The new mechanism was discussed in viewpoint of the variation of electronic band structure, surface oxidation and light absorption of Si at high temperature.

Original languageEnglish
Pages (from-to)7269-7274
Number of pages6
JournalOptics Express
Volume15
Issue number12
DOIs
Publication statusPublished - 2007 Jun 11

Fingerprint

etching
silicon
lasers
electromagnetic absorption
glass
ultraviolet lasers
YAG lasers
oxidation
electronics

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chung, Chen-Kuei ; Wu, M. Y. / A hybrid CO2 laser processing for silicon etching. In: Optics Express. 2007 ; Vol. 15, No. 12. pp. 7269-7274.
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A hybrid CO2 laser processing for silicon etching. / Chung, Chen-Kuei; Wu, M. Y.

In: Optics Express, Vol. 15, No. 12, 11.06.2007, p. 7269-7274.

Research output: Contribution to journalArticle

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