A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor Schottky diode

Y. Y. Tsai; K. W. Lin; C. W. Hung; T. H. Tsai; W. C. Liu

doi:10.1109/EDSSC.2007.4450118

A hydrogen gas sensitive Pt-In_0.5Al_0.5P metal-semiconductor Schottky diode

Y. Y. Tsai, K. W. Lin, C. W. Hung, T. H. Tsai, W. C. Liu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new and interesting compound semiconductor Schottky diode hydrogen sensor based on a Pt-In_0.5Al_0.5P metal-semiconductor (MS) structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pt-semiconductor interface. Experimentally, the studied hydrogen sensor can be operated systematically under the applied bi-polarity voltage biases. When the temperature is increased from 30 to 250°C, the hydrogen relative sensitivity ratio (S_r), under the applied forward (reverse) bias of 0.3V, is decreased from 181.2% (250.3%) to 28.2% (33.5%) upon exposing to the 9970 ppm H₂/air gas. Moreover, the hydrogen effect in the Schottky barrier height lowering is observed.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	287-290
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450118
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450118

Cite this

Tsai, Y. Y., Lin, K. W., Hung, C. W., Tsai, T. H., & Liu, W. C. (2007). A hydrogen gas sensitive Pt-In_0.5Al_0.5P metal-semiconductor Schottky diode. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 287-290). Article 4450118 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450118

@inproceedings{837d2d110acb431b8422c5bfd9059d17,

title = "A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor Schottky diode",

abstract = "A new and interesting compound semiconductor Schottky diode hydrogen sensor based on a Pt-In0.5Al0.5P metal-semiconductor (MS) structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pt-semiconductor interface. Experimentally, the studied hydrogen sensor can be operated systematically under the applied bi-polarity voltage biases. When the temperature is increased from 30 to 250°C, the hydrogen relative sensitivity ratio (Sr), under the applied forward (reverse) bias of 0.3V, is decreased from 181.2% (250.3%) to 28.2% (33.5%) upon exposing to the 9970 ppm H2/air gas. Moreover, the hydrogen effect in the Schottky barrier height lowering is observed.",

author = "Tsai, {Y. Y.} and Lin, {K. W.} and Hung, {C. W.} and Tsai, {T. H.} and Liu, {W. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450118",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "287--290",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Tsai, YY, Lin, KW, Hung, CW, Tsai, TH & Liu, WC 2007, A hydrogen gas sensitive Pt-In_0.5Al_0.5P metal-semiconductor Schottky diode. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450118, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 287-290, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450118

A hydrogen gas sensitive Pt-In_0.5Al_0.5P metal-semiconductor Schottky diode. / Tsai, Y. Y.; Lin, K. W.; Hung, C. W. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 287-290 4450118 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor Schottky diode

AU - Tsai, Y. Y.

AU - Lin, K. W.

AU - Hung, C. W.

AU - Tsai, T. H.

AU - Liu, W. C.

PY - 2007

Y1 - 2007

N2 - A new and interesting compound semiconductor Schottky diode hydrogen sensor based on a Pt-In0.5Al0.5P metal-semiconductor (MS) structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pt-semiconductor interface. Experimentally, the studied hydrogen sensor can be operated systematically under the applied bi-polarity voltage biases. When the temperature is increased from 30 to 250°C, the hydrogen relative sensitivity ratio (Sr), under the applied forward (reverse) bias of 0.3V, is decreased from 181.2% (250.3%) to 28.2% (33.5%) upon exposing to the 9970 ppm H2/air gas. Moreover, the hydrogen effect in the Schottky barrier height lowering is observed.

AB - A new and interesting compound semiconductor Schottky diode hydrogen sensor based on a Pt-In0.5Al0.5P metal-semiconductor (MS) structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pt-semiconductor interface. Experimentally, the studied hydrogen sensor can be operated systematically under the applied bi-polarity voltage biases. When the temperature is increased from 30 to 250°C, the hydrogen relative sensitivity ratio (Sr), under the applied forward (reverse) bias of 0.3V, is decreased from 181.2% (250.3%) to 28.2% (33.5%) upon exposing to the 9970 ppm H2/air gas. Moreover, the hydrogen effect in the Schottky barrier height lowering is observed.

UR - http://www.scopus.com/inward/record.url?scp=43049183187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049183187&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450118

DO - 10.1109/EDSSC.2007.4450118

M3 - Conference contribution

AN - SCOPUS:43049183187

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 287

EP - 290

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -