A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering