Abstract
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.
Original language | English |
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Pages (from-to) | 734-737 |
Number of pages | 4 |
Journal | Microelectronics Reliability |
Volume | 50 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2010 May 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering