Abstract
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.
| Original language | English |
|---|---|
| Pages (from-to) | 734-737 |
| Number of pages | 4 |
| Journal | Microelectronics Reliability |
| Volume | 50 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT). / Tsai, Tsung Han; Chen, Huey-Ing; Lin, Kun Wei; Chen, Tai You; Huang, Chien Chang; Hsu, Kai Siang; Liu, Wen-Chau.
In: Microelectronics Reliability, Vol. 50, No. 5, 01.05.2010, p. 734-737.Research output: Contribution to journal › Article
TY - JOUR
T1 - A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)
AU - Tsai, Tsung Han
AU - Chen, Huey-Ing
AU - Lin, Kun Wei
AU - Chen, Tai You
AU - Huang, Chien Chang
AU - Hsu, Kai Siang
AU - Liu, Wen-Chau
PY - 2010/5/1
Y1 - 2010/5/1
N2 - A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.
AB - A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.
UR - http://www.scopus.com/inward/record.url?scp=77953134829&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953134829&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2010.01.009
DO - 10.1016/j.microrel.2010.01.009
M3 - Article
VL - 50
SP - 734
EP - 737
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 5
ER -