A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai, Huey-Ing Chen, Kun Wei Lin, Tai You Chen, Chien Chang Huang, Kai Siang Hsu, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

Original languageEnglish
Pages (from-to)734-737
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
Publication statusPublished - 2010 May 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Hydrogen
sensors
Sensors
Electric potential
electric potential
Electric power utilization
hydrogen
Drain current
high current
air
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Tsai, Tsung Han ; Chen, Huey-Ing ; Lin, Kun Wei ; Chen, Tai You ; Huang, Chien Chang ; Hsu, Kai Siang ; Liu, Wen-Chau. / A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT). In: Microelectronics Reliability. 2010 ; Vol. 50, No. 5. pp. 734-737.
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A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT). / Tsai, Tsung Han; Chen, Huey-Ing; Lin, Kun Wei; Chen, Tai You; Huang, Chien Chang; Hsu, Kai Siang; Liu, Wen-Chau.

In: Microelectronics Reliability, Vol. 50, No. 5, 01.05.2010, p. 734-737.

Research output: Contribution to journalArticle

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AU - Hsu, Kai Siang

AU - Liu, Wen-Chau

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