A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Tai You Chen, Chien Chang Huang, Kai Siang Hsu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

Original languageEnglish
Pages (from-to)734-737
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
Publication statusPublished - 2010 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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