A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai; Huey Ing Chen; Kun Wei Lin; Tai You Chen; Chien Chang Huang; Kai Siang Hsu; Wen Chau Liu

doi:10.1016/j.microrel.2010.01.009

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Tai You Chen, Chien Chang Huang, Kai Siang Hsu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H₂/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

Original language	English
Pages (from-to)	734-737
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.009
Publication status	Published - 2010 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2010.01.009

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title = "A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)",

abstract = "A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Lin, {Kun Wei} and Chen, {Tai You} and Huang, {Chien Chang} and Hsu, {Kai Siang} and Liu, {Wen Chau}",

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AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Chen, Tai You

AU - Huang, Chien Chang

AU - Hsu, Kai Siang

AU - Liu, Wen Chau

PY - 2010/5/1

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N2 - A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

AB - A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

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