A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung, Tsung Han Tsai, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Tzu Pin Chen, Wen-Chau Liu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalPhysica Scripta T
VolumeT129
DOIs
Publication statusPublished - 2007 Dec 1
Event2nd International Symposium on Functional Materials - Hangzhou, China
Duration: 2007 May 162007 May 19

Fingerprint

Hydrogen
Thin Films
Sensor
sensors
hydrogen
thin films
Temperature Dependence
Sensing
High Performance
Voltage
Negative Dependence
Positive Dependence
temperature dependence
Sensor Array
Thermal Effects
sensitivity
thermionic emission
electric potential
Schottky diodes
Diode

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Cite this

Hung, C. W., Tsai, T. H., Tsai, Y. Y., Lin, K. W., Chen, H-I., Chen, T. P., & Liu, W-C. (2007). A hydrogen sensor based on InAlAs material with Pt catalytic thin film. Physica Scripta T, T129, 345-348. https://doi.org/10.1088/0031-8949/2007/T129/076
Hung, Ching Wen ; Tsai, Tsung Han ; Tsai, Yan Ying ; Lin, Kun Wei ; Chen, Huey-Ing ; Chen, Tzu Pin ; Liu, Wen-Chau. / A hydrogen sensor based on InAlAs material with Pt catalytic thin film. In: Physica Scripta T. 2007 ; Vol. T129. pp. 345-348.
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abstract = "On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600{\%}, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.",
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A hydrogen sensor based on InAlAs material with Pt catalytic thin film. / Hung, Ching Wen; Tsai, Tsung Han; Tsai, Yan Ying; Lin, Kun Wei; Chen, Huey-Ing; Chen, Tzu Pin; Liu, Wen-Chau.

In: Physica Scripta T, Vol. T129, 01.12.2007, p. 345-348.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A hydrogen sensor based on InAlAs material with Pt catalytic thin film

AU - Hung, Ching Wen

AU - Tsai, Tsung Han

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey-Ing

AU - Chen, Tzu Pin

AU - Liu, Wen-Chau

PY - 2007/12/1

Y1 - 2007/12/1

N2 - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

AB - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

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