A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung, Tsung Han Tsai, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Tzu Pin Chen, Wen-Chau Liu

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalPhysica Scripta T
Publication statusPublished - 2007 Dec 1
Event2nd International Symposium on Functional Materials - Hangzhou, China
Duration: 2007 May 162007 May 19

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics


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