A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung; Tsung Han Tsai; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Tzu Pin Chen; Wen Chau Liu

doi:10.1088/0031-8949/2007/T129/076

A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung, Tsung Han Tsai, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Tzu Pin Chen, Wen Chau Liu

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (S_r) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on S_r is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

Original language	English
Pages (from-to)	345-348
Number of pages	4
Journal	Physica Scripta T
Volume	T129
DOIs	https://doi.org/10.1088/0031-8949/2007/T129/076
Publication status	Published - 2007
Event	2nd International Symposium on Functional Materials - Hangzhou, China Duration: 2007 May 16 → 2007 May 19

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Mathematical Physics
Condensed Matter Physics

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10.1088/0031-8949/2007/T129/076

Cite this

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title = "A hydrogen sensor based on InAlAs material with Pt catalytic thin film",

abstract = "On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.",

author = "Hung, {Ching Wen} and Tsai, {Tsung Han} and Tsai, {Yan Ying} and Lin, {Kun Wei} and Chen, {Huey Ing} and Chen, {Tzu Pin} and Liu, {Wen Chau}",

year = "2007",

doi = "10.1088/0031-8949/2007/T129/076",

language = "English",

volume = "T129",

pages = "345--348",

journal = "Physica Scripta T",

issn = "0281-1847",

publisher = "IOP Publishing Ltd.",

note = "2nd International Symposium on Functional Materials ; Conference date: 16-05-2007 Through 19-05-2007",

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TY - JOUR

T1 - A hydrogen sensor based on InAlAs material with Pt catalytic thin film

AU - Hung, Ching Wen

AU - Tsai, Tsung Han

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Chen, Tzu Pin

AU - Liu, Wen Chau

PY - 2007

Y1 - 2007

N2 - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

AB - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

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U2 - 10.1088/0031-8949/2007/T129/076

DO - 10.1088/0031-8949/2007/T129/076

M3 - Conference article

AN - SCOPUS:39549121455

SN - 0281-1847

VL - T129

SP - 345

EP - 348

JO - Physica Scripta T

JF - Physica Scripta T

T2 - 2nd International Symposium on Functional Materials

Y2 - 16 May 2007 through 19 May 2007

ER -

A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Abstract

All Science Journal Classification (ASJC) codes

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