A hysteretic boost regulator with Emulated-Ramp Feedback (ERF) current-sensing technique for LED driving applications

Jhih Sian Guo, Shih Mei Lin, Chien-Hung Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

An inductor switching hysteretic control boost DC-DC regulator is presented in this paper with a newly proposed current-sensing technique named "Emulated-Ramp Feedback, ERF". A boost regulator with a chip verification which achieves a simple structure and low cost is presented for LED driving applications. The regulator was fabricated in a TSMC 0.25μm high voltage (HV) CMOS process with a specification of 5V to 12V in a 0-300mA load range. And a peak efficiency of 92.1% is achieved with only 1.014mm2 chip area.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages61-64
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore
Duration: 2013 Nov 112013 Nov 13

Other

Other2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
CountrySingapore
CitySingapore
Period13-11-1113-11-13

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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  • Cite this

    Guo, J. S., Lin, S. M., & Tsai, C-H. (2013). A hysteretic boost regulator with Emulated-Ramp Feedback (ERF) current-sensing technique for LED driving applications. In Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 (pp. 61-64). [6690982] https://doi.org/10.1109/ASSCC.2013.6690982