A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

Po Kai Huang, Hsiang Yi Chen, Shui-Jinn Wang, Rong-Ming Ko, An Chi Huang, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	International Conference on Solid State Devices and Materials (SSDM’19)
Place of Publication	Nagoya University, Aichi, Japan
Publication status	Published - 2019 Sept 2

Cite this

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title = "A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell",

author = "Huang, {Po Kai} and Chen, {Hsiang Yi} and Shui-Jinn Wang and Rong-Ming Ko and Huang, {An Chi} and Meng-Hsueh Chiang",

year = "2019",

month = sep,

day = "2",

language = "English",

booktitle = "International Conference on Solid State Devices and Materials (SSDM{\textquoteright}19)",

}

A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell. / Huang, Po Kai; Chen, Hsiang Yi; Wang, Shui-Jinn et al.
International Conference on Solid State Devices and Materials (SSDM’19). Nagoya University, Aichi, Japan, 2019.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

AU - Huang, Po Kai

AU - Chen, Hsiang Yi

AU - Wang, Shui-Jinn

AU - Ko, Rong-Ming

AU - Huang, An Chi

AU - Chiang, Meng-Hsueh

PY - 2019/9/2

Y1 - 2019/9/2

M3 - Conference contribution

BT - International Conference on Solid State Devices and Materials (SSDM’19)

CY - Nagoya University, Aichi, Japan

ER -