A Ka-band PHEMT diode double-balanced star mixer MMIC

C. W. Huang; Shoou-Jinn Chang; W. Wu; C. L. Wu; C. S. Chang

doi:10.1002/mop.20334

A Ka-band PHEMT diode double-balanced star mixer MMIC

C. W. Huang, Shoou-Jinn Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm². The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	42
Issue number	6
DOIs	https://doi.org/10.1002/mop.20334
Publication status	Published - 2004 Sep 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{4e9268f21df4441ab9843987cc73e0c7,

title = "A Ka-band PHEMT diode double-balanced star mixer MMIC",

abstract = "This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.",

author = "Huang, {C. W.} and Shoou-Jinn Chang and W. Wu and Wu, {C. L.} and Chang, {C. S.}",

year = "2004",

month = sep,

day = "20",

doi = "10.1002/mop.20334",

language = "English",

volume = "42",

pages = "455--458",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "6",

}

TY - JOUR

T1 - A Ka-band PHEMT diode double-balanced star mixer MMIC

AU - Huang, C. W.

AU - Chang, Shoou-Jinn

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

AB - This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

UR - http://www.scopus.com/inward/record.url?scp=4444382922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444382922&partnerID=8YFLogxK

U2 - 10.1002/mop.20334

DO - 10.1002/mop.20334

M3 - Article

AN - SCOPUS:4444382922

VL - 42

SP - 455

EP - 458

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 6

ER -