A Ka-band PHEMT diode double-balanced star mixer MMIC

C. W. Huang; S. J. Chang; W. Wu; C. L. Wu; C. S. Chang

doi:10.1002/mop.20334

A Ka-band PHEMT diode double-balanced star mixer MMIC

C. W. Huang, S. J. Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm². The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	42
Issue number	6
DOIs	https://doi.org/10.1002/mop.20334
Publication status	Published - 2004 Sep 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1002/mop.20334

Cite this

@article{4e9268f21df4441ab9843987cc73e0c7,

title = "A Ka-band PHEMT diode double-balanced star mixer MMIC",

abstract = "This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.",

author = "Huang, {C. W.} and Chang, {S. J.} and W. Wu and Wu, {C. L.} and Chang, {C. S.}",

year = "2004",

month = sep,

day = "20",

doi = "10.1002/mop.20334",

language = "English",

volume = "42",

pages = "455--458",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "6",

}

TY - JOUR

T1 - A Ka-band PHEMT diode double-balanced star mixer MMIC

AU - Huang, C. W.

AU - Chang, S. J.

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

AB - This paper describes the design and measurement of a double-balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled-line structure. The microwave and millimeter-wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AGaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm2. The typical up-conversion loss is 7 dB with an LO-to-RF isolation better than 28 dB.

UR - http://www.scopus.com/inward/record.url?scp=4444382922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444382922&partnerID=8YFLogxK

U2 - 10.1002/mop.20334

DO - 10.1002/mop.20334

M3 - Article

AN - SCOPUS:4444382922

VL - 42

SP - 455

EP - 458

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 6

ER -

A Ka-band PHEMT diode double-balanced star mixer MMIC

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this