A Ku band four-stage PHEMT 1W MMIC power amplifier

C. W. Huang, Shoou-Jinn Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Original languageEnglish
Pages (from-to)428-432
Number of pages5
JournalMicroelectronics Journal
Volume37
Issue number5
DOIs
Publication statusPublished - 2006 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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