A Ku band four-stage PHEMT 1W MMIC power amplifier

C. W. Huang; Shoou-Jinn Chang; W. Wu; C. L. Wu; C. S. Chang

doi:10.1016/j.mejo.2005.07.004

A Ku band four-stage PHEMT 1W MMIC power amplifier

C. W. Huang, Shoou-Jinn Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Original language	English
Pages (from-to)	428-432
Number of pages	5
Journal	Microelectronics Journal
Volume	37
Issue number	5
DOIs	https://doi.org/10.1016/j.mejo.2005.07.004
Publication status	Published - 2006 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2005.07.004

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title = "A Ku band four-stage PHEMT 1W MMIC power amplifier",

abstract = "A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.",

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AU - Chang, Shoou-Jinn

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

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AB - A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

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A Ku band four-stage PHEMT 1W MMIC power amplifier

Abstract

All Science Journal Classification (ASJC) codes

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